AKASAKA Yasushi | Semiconductor Leading Edge Technologies Inc.
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概要
関連著者
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Akasaka Yasushi
Semiconductor Leading Edge Technologies Inc. (selete)
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
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OOTSUKA Fumio
Semiconductor Leading Edge Technologies Inc.
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YAMABE Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba
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Yamamoto K
Kaneka Corporation
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc.
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc.
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Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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YAMADA Keisaku
Waseda Univ.
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MATSUKI Takeo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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MIYAGAWA Kazuhiro
Semiconductor Leading Edge Technologies Inc.
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HOSHI Takeshi
Semiconductor Leading Edge Technologies Inc.
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WATANABE Yasuhiko
Semiconductor Leading Edge Technologies Inc.
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YASUHIRA Mitsuo
Semiconductor Leading Edge Technologies Inc.
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OGAWA Osamu
Semiconductor Leading Edge Technologies, Inc. (Selete)
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AMIAKA Toshio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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NAKAMURA Kunio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Kasuya Tooru
Semiconductor Leading Edge Technologies Inc. (selete)
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Lee Myoungbum
Semiconductor Leading Edge Technologies Inc. (selete)
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Nakamura Genji
Semiconductor Leading Edge Technologies Inc. (selete)
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Kasai Naoki
Device Platforms Laboratories Nec Corporation
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Hayashi Kiyoshi
Renesas
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Watanabe Yasumasa
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences The University Of Tokyo
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Yoshida Shiniti
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Uedono Akira
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Akasaka Yasushi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba
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Shiraishi K
Institute Of Physics University Of Tsukuba
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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NAKAJIMA Kiyomi
National Institute for Mateirals Science
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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WATANABE Heiji
Graduate School of Engineering, Osaka University
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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SHIRAISHI Kenji
Institute of Physics, University of Tsukuba
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YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
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SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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NARA Yasuo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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TORII Kazuyoshi
Hitachi, Ltd., Central Research Laboratory
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MAEDA Takeshi
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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Yamamoto K
Univ. Of Tsukuba
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NAKAMURA Genji
Semiconductor Leading Edge Technologies, Inc. (Selete)
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UMEZAWA Naoto
Advanced Electronic Materials Center, National Institute for Materials Science
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LEE Myoungbum
Semiconductor Leading Edge Technologies, Inc. (Selete)
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KASUYA Tooru
Semiconductor Leading Edge Technologies, Inc. (Selete)
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CHIKYOW Toyohiro
Advanced Electronic Materials Center, National Institute for Materials Science
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YOSHIDA Shiniti
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WATANABE Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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YAMADA Keisaku
National Institute for Material Science
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KONNO Mitsuru
Application Technology Department, Naka Customer Center, Hitachi Science Systems, Ltd.
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Torii Kazuyoshi
Hitachi Ltd. Central Research Laboratory
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Konno Mitsuru
Application Technology Department Naka Customer Center Hitachi Science Systems Ltd.
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Watanabe Heiji
Graduate School Of Engineering Osaka University
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HAYASHI Kiyoshi
Semiconductor Leading Edge Technologies, Inc.
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KASAI Naoki
Semiconductor Leading Edge Technologies, Inc.
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Yasutake K
Graduate School Of Engineering Osaka University
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc. (selete)
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Kasai Naoki
Nec
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NISHIMURA Isamu
Rohm
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AKASAKA Yasushi
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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NOGUCHI Masataka
NEC
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YAMASHITA Koji
Sanyo
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Akasaka Yasushi
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Maeda Takeshi
Semiconductor Leading Edge Technologies Inc.
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Matsuki Takeo
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Watanabe Yasumasa
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Ito Kenichi
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
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Uedono Akira
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Momida Hiroyoshi
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Ohmori Kenji
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Yamada Keisaku
Nano Technology Research Laboratory, Waseda University, Shinjuku, Tokyo 16-0041, Japan
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Naito Tatsuya
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Otsuka Takashi
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, Tokyo 169-0041, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Chikyow Toyohiro
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Akasaka Yasushi
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies, Inc.
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Shimura Takayoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Lee Myoungbum
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Nakamura Genji
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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YASUTAKE Kiyoshi
Graduate School of Engineering, Osaka University
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Kasuya Tooru
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Amiaka Toshio
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Watanabe Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Nakamura Kunio
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Miyazaki Seiichi
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Ito Kenichi
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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Shiraishi Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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WATANABE Yasumasa
Department of Aeronautics and Astronautics, The University of Tokyo
著作論文
- Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties