Hasunuma Ryu | Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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概要
- Hasunuma Ryuの詳細を見る
- 同名の論文著者
- Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japanの論文著者
関連著者
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Hasunuma Ryu
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Chen Jun
National Agricultural Res. Center For Hokkaido Region Sapporo Jpn
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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SEKIGUCHI Takashi
National Insitute for Materials Science
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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CHIKYO Toyohiro
National Institute for Material Science
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YAMABE Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Inumiya Seiji
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
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Uedono Akira
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Momida Hiroyoshi
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Ohmori Kenji
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8571, Japan
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Uedono Akira
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, Tokyo 169-0041, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 513 Wasedatsurumaki-cho, Shinjuku, Tokyo 162-0041, Japan
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Hayashi Tomohiro
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Fukata Naoki
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Takase Masami
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Tamura Chihiro
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Akasaka Yasushi
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
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Sekiguchi Takashi
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Chen Jun
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Hayashi Yusuke
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Ota Masahiro
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Chikyo Toyohiro
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
著作論文
- Vestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
- Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching
- Microscopic Thickness Uniformity and Time-Dependent Dielectric Breakdown Lifetime Dispersion of Thermally Grown Ultrathin SiO
- Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)