Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
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概要
- 論文の詳細を見る
A microscopic investigation of gate leakage behaviors in metal–oxide–semiconductor field-effect transistors (MOSFETs) with polycrystalline Si/HfSiON high-$k$ gate stacks was carried out by an electron-beam-induced current (EBIC) technique. The transport mechanisms of electrons and holes in nonbreakdown MOSFETs were clarified. Carrier separated measurement revealed that hole transport in pFETs is significantly enhanced by charged traps, while electron transport in nFETs appears to be independent of such traps. A detailed investigation on the trap-related carrier transport in pFETs was carried out employing EBIC observations and gate bias and acceleration voltage dependences.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Chen Jun
National Agricultural Res. Center For Hokkaido Region Sapporo Jpn
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SEKIGUCHI Takashi
National Insitute for Materials Science
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CHIKYO Toyohiro
National Institute for Material Science
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8571, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 513 Wasedatsurumaki-cho, Shinjuku, Tokyo 162-0041, Japan
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Fukata Naoki
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Takase Masami
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Sekiguchi Takashi
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Chen Jun
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Chikyo Toyohiro
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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