Behavior of low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors for different impurity concentrations (Special issue: Dielectric thin films for future electron devices: science and technology)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Yamada Keisaku

  Nanotechnology Research Laboratories Waseda University

• Ohmori Kenji

  Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan

• Hettiarachchi Ranga

  Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan

• Matsuki Takeo

  Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan

• Feng Wei

  Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan

関連論文

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• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Behavior of low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors for different impurity concentrations (Special issue: Dielectric thin films for future electron devices: science and technology)
• Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
• Electronic structure study of local dielectric properties of lanthanoid oxide clusters
• Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-$k$ Gate Dielectrics
• Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
• Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
• Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

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