Ohmori Kenji | Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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概要
- Ohmori Kenjiの詳細を見る
- 同名の論文著者
- Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japanの論文著者
関連著者
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Ohmori Kenji
Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Hettiarachchi Ranga
Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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Matsuki Takeo
Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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Feng Wei
Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Tamura Chihiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Hayashi Tomohiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Kikuchi Yuuki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
著作論文
- Behavior of low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors for different impurity concentrations (Special issue: Dielectric thin films for future electron devices: science and technology)
- Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
- Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films