Yamabe Kikuo | Institute Of Applied Physics University Of Tsukuba
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概要
関連著者
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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Tokuda Norio
Institute Of Applied Physics University Of Tsukuba
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Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
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Tokuda Norio
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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Tokuda N
Univ. Tsukuba Ibaraki Jpn
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Tokuda Norio
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Tokuda Norio
Institute Of Science And Engineering Kanazawa University
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Tokuda N
Institute Of Science And Engineering Kanazawa University
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Yamabe K
Institute Of Applied Physics University Of Tsukuba
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Hojo Daisuke
Institute Of Applied Physics University Of Tsukuba
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MIKI Kazushi
Nanotechnology Research Institute-AIST
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Yamanaka Sadanori
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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HOJO Daisuke
Institute of Applied Physics, University of Tsukuba
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YAMASAKI Satoshi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
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MIKI Kazushi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
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MIKI Kazushi
Electrotechnical Laboratory (ETL)
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Miki K
Electrotechnical Laboratory (etl)
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Miki Kazushi
National Institute Of Materials Science (nims)
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Miki Kazushi
Aist
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Miki Kazushi
Nanoarchitecture Group Organic Nanomaterials Center National Institute For Materials Science
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Kanda Takahiro
Institute Of Applied Physics University Of Tsukuba
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SHIMOYAMA Kazuo
Institute of Applied Physics, University of Tsukuba
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Shimoyama Kazuo
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Tokuda Norio
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Takata M
Nagaoka Univ. Technology Niigata
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Maeda T
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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Maeda T
Electrotechnical Lab. Tskuba Jpn
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MURATA Masahide
Institute of Applied Physics, University of Tsukuba
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OKUSHI Hideyo
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology
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YAMASAKI Satoshi
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology
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MIKI Kazushi
Institute of Applied Physics, University of Tsukuba
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YAMASAKI Satoshi
Institute of Applied Physics, University of Tsukuba
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HASUNUMA Ryu
Institute of Applied Physics, University of Tsukuba
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KANDA Takahiro
Institute of Applied Physics, University of Tsukuba
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Maeda Toru
Department Of Material Science Graduate School Of Engineering Tohoku Uniiversity
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Maeda T
Storage Technology Research Center Research & Development Group Hitachi Ltd.
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Maeda T
Electrotechnical Lab. Ibaraki Jpn
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Maeda Tatsuro
Electrotechnical Laboratory
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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HIGUCHI Keiichi
Institute of Applied Physics, University of Tsukuba
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Ryu Hasunuma
Institute Of Applied Physics University Of Tsukuba
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Goto Masakazu
Institute Of Applied Physics University Of Tsukuba
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Umezawa Hitoshi
Diamond Research Center Aist
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Murata Masahide
Institute Of Applied Physics University Of Tsukuba
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Nishizawa Masayasu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Shimoyama K
Univ. Tsukuba Ibaraki Jpn
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Sometani Mitsuru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tamura Chihiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Umezawa Hitoshi
Diamond Res. Lab, National Inst. of Advanced Industrial Sci.
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YAMANAKA Shoji
Faculty of Engineering,Hiroshima University
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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UMEZAWA Hitoshi
Diamond Research Center, AIST
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KATO Hiromitsu
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology
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OGURA Masahiko
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology
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GONDA Satoshi
National Metrology Institute of Japan, AIST
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TOKUDA Norio
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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NISHIZAWA Masayasu
Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and
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OKAMOTO Junichi
Institute of Applied Physics, University of Tsukuba
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HOIO Daisuke
Institute of Applied Physics, University of Tsukuba
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Eimori Takahisa
Semiconductor Leading Edge Technologies Inc.
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MAEDA Tatsuro
Electron Devices Division, Electrotechnical Laboratory
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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Horii Sadayoshi
Hitachi Kokusai Electric Inc.
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Imai Keitaro
Microelectronics Engineering Laboratory Toshiba Corporation:ibm
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Imai Keitaro
Microelectronics Engineering Laboratory Advanced Microelectronics Center Toshiba Corporation
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Yamasaki Satoshi
Department Of Orthopaedic Surgery Osaka Kosei-nenkin Hospital
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Yamasaki Satoshi
Research Center For Advanced Carbon Materials-aist
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SHIRAISHI Kenji
Nanomaterials Lab., National Institute for Materials Science
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YAMADA Keisaku
Nanomaterials Lab., National Institute for Materials Science
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Oeda Hitoshi
Institute Of Applied Physics University Of Tsukuba
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Hoio Daisuke
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
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Yamabe Kikuo
Institute Of Materials Science University Of Tsukuba
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Ogura M
Jst‐crest Ibaraki Jpn
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Gonda Satoshi
National Metrology Institute Of Japan Aist
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Okushi H
Electrotechnical Lab. Ibaraki Jpn
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Okushi Hideyo
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Kanda T
Institute Of Applied Physics University Of Tsukuba:center For Tsukuba Advanced Research Alliance Uni
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Murata M
Sumitomo Electric Ind. Ltd. Yokohama Jpn
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Kato Hiromitsu
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Ogura Masahiko
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies Inc.
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KUBO Kousuke
Institute of Applied Physics, University of Tsukuba
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IIDA Manabu
Institute of Applied Physics, University of Tsukuba
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MAEDA Tatsuro
Center for Tsukuba Advanced Research Alliance, University of Tsukuba
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Sugahara Yoshiyuki
Device Technology Laboratory Fuji Electric Advanced Technology Co. Ltd.
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KAI Liao
Institute of Applied Physics, University of Tsukuba
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Iida Manabu
Institute Of Applied Physics University Of Tsukuba:center For Tsukuba Advanced Research Alliance Uni
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INOMOTO Minoru
Institute of Materials Science, University of Tsukuba
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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KIYOHATRA Masahiro
Institute of Applied Physics, University of Tsukuba
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Kubo Kousuke
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
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Kai Liao
Institute Of Applied Physics University Of Tsukuba
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Hojo D
Univ. Tsukuba Tsukuba Jpn
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Yamasaki S
Department Of Orthopaedic Surgery Osaka Kosei-nenkin Hospital
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Okamoto Junichi
Institute Of Applied Physics University Of Tsukuba
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Inomoto Minoru
Institute Of Materials Science University Of Tsukuba
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Kiyohatra Masahiro
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takeda Ryuji
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Takeda Ryuji
Silicon Business Group, Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Narita Masahiro
Silicon Business Group, Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
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Tani-ike Seiji
Core Technology Center, Covalent Materials Corporation, Hadano, Kanagawa 257-0031, Japan
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Ogino Masaaki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Kuribayashi Hitoshi
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Hayashi Tomohiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Kikuchi Yuuki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ohmori Kenji
Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 306-8571, Japan
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Yamada Keisaku
Nanomaterials Lab., National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
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Naito Tatsuya
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ogino Masaaki
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Ogino Masaaki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Kuribayashi Hitoshi
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Kuribayashi Hitoshi
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Nakata Hiroyuki
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Eimori Takahisa
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ohji Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Katakami Akira
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shimura Kazuhiro
Hitachi Kukusai Electric Inc., 2-1 Yasuuchi, Yatsuo-machi, Toyama 939-2393, Japan
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Aoyama Takayuki
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Okushi Hideyo
Nanotechnology Research Instiute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Higuchi Keiichi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Goto Masakazu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sugahara Yoshiyuki
Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Mitsuhashi Riichiro
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ohdaira Toshiyuki
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Nara Yasuo
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nishizawa Masayasu
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
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Tokuda Norio
Nanotechnology Research Instiute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kiyohara Masahiro
Institute of Applied Physics, University of Tsukuba
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kato Hiromitsu
Nanotechnology Research Institute, AIST (National Institute of Advanced Industrial Science and Technology), Tsukuba Center 2, Tsukuba, Ibaraki 305-8568, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hojo Daisuke
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Yamasaki Satoshi
Nanotechnology Research Instiute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Oeda Hitoshi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, Japan
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Ogino Masaaki
Electronic Device Laboratory, Fuji Electric Co., Ltd.
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Kanda Takahiro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tokuda Norio
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, Japan
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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Miki Kazushi
Nanotechnology Research Institute-AIST, Tsukuba, Ibaraki 305-8562, Japan
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Kuribayashi Hitoshi
Matsumoto Factory, Electronic Devices Business Headquater, Fuji Electric Co., Ltd., Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Matsumoto Factory, Electronic Devices Business Headquater, Fuji Electric Co., Ltd., Matsumoto, Nagano 390-0821, Japan
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies
著作論文
- Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors
- SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
- Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
- Selective Growth of Cu Nanowires on Si(111) Substrates
- Leakage Current Distribution of Cu-Contaminated Thin SiO_2
- Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
- Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method
- Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
- Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
- Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
- Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
- Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
- Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
- Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
- Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
- Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
- Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride
- Leakage Current Distribution of Cu-Contaminated Thin SiO2
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water