Sano Nobuyuki | Institute Of Applied Physics The University Of Tsukuba

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著作論文

Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
Schottky Barrier MOSFETs as Resonant Tunneling Devices
The Resonant Tunneling Mode of a Single Electron Transistor
Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
Transport Characteristics of the Cross Junction of Atomic Chains
Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule

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