Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule
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概要
- 論文の詳細を見る
The separability of Coulomb and phonon scattering processes in inversion layers of metal–oxide–semiconductor field-effect-transistors (MOSFETs) was studied. The effect of finite collisional duration due to phonon scattering was considered in the evaluation of Coulomb scattering-limited mobility to investigate the relationship between the separability of Coulomb and phonon scattering processes and the long-range nature of Coulomb potential. It was found that the condition under which Coulomb scattering is separated from phonon scattering is determined by the relationship between the screening length due to free carriers in the inversion layers and the phonon mean free path. It was also found that the long-range component of the Coulomb potential is effectively cut off by phonon scattering.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Ishihara Takamitsu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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