A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the influence of grain size variations on the device properties of polycrystalline silicon thin film transistors (poly-Si TFTs) by drift-diffusion (DD) simulations. It is shown that subthreshold characteristics in poly-Si TFTs are dependent on the location of grain boundaries when the commonly-used grain boundary model is employed for DD simulations. A more realistic grain boundary model for size variations subject to the Gaussian distribution is proposed. Employing the proposed grain boundary model, threshold voltage variations are naturally represented by the Gaussian distribution expected from the central-limit theorem. The proposed model allows us to quantitatively analyze the device characteristics of poly-Si TFTs.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-15
著者
-
Sano Nobuyuki
Institute Of Applied `jusocs University Of Tsukuba
-
Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
-
Toriyama Shuichi
Institute Of Applied `jusocs University Of Tsukuba
-
Kitahara Yoshiyuki
Corporate Manufacturing Engineering Center Toshiba Corporation
関連論文
- Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
- Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
- Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
- Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
- Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
- A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
- Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
- Schottky Barrier MOSFETs as Resonant Tunneling Devices
- The Resonant Tunneling Mode of a Single Electron Transistor
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
- Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
- Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
- A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method
- Transport Characteristics of the Cross Junction of Atomic Chains
- Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule