Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
スポンサーリンク
概要
- 論文の詳細を見る
We carry out three-dimensional Monte Carlo (MC) simulations including the full Coulomb potential associated with electrons and ionized impurities in bulk Si. The long-range part of the Coulomb potential is taken into account by solving the Poisson equation self-consistently, whereas the short-range part is included as scattering processes localized in real space, so that the discreteness of impurities and electrons is taken into account for the first time. After careful optimization of parameters involved in simulations, the present MC simulation successfully reproduces the low-field electron mobility in Si as a function of impurity concentrations up to $10^{20}$ cm-3.
- Japan Society of Applied Physicsの論文
- 2008-05-25
著者
-
Fukui Takayuki
Institute Of Applied Physics University Of Tsukuba
-
Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
-
Uechi Tadayoshi
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Jap
-
Uechi Tadayoshi
Institute Of Applied Physics University Of Tsukuba
関連論文
- Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
- Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
- Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
- Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
- Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
- A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
- Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
- Schottky Barrier MOSFETs as Resonant Tunneling Devices
- The Resonant Tunneling Mode of a Single Electron Transistor
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
- Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
- Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
- A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- Transport Characteristics of the Cross Junction of Atomic Chains
- Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule