A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-05-15

著者

• SANO Nobuyuki

  Institute of Applied Physics, University of Tsukuba

• NATORI Kenji

  Institute of Applied Physics, University of Tsukuba

• Natori Kenji

  Institute Of Applied Physics University Of Tsukuba

• Uehara Tsuyoshi

  Institute Of Applied Physics University Of Tsukuba

• Sano Nobuyuki

  Institute Of Applied Physics The University Of Tsukuba

関連論文

• Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
• Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
• Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
• Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers : Beyond Matthiessen's Rule
• Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
• Transport Characteristics of the Cross Junction of Atomic Chains
• Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
• A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
• Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
• Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
• Schottky Barrier MOSFETs as Resonant Tunneling Devices
• The Resonant Tunneling Mode of a Single Electron Transistor
• Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
• Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
• Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
• Nanoscale Quasi-Ballistic MOSFETs in Reflection-Transmission Model
• Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
• Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
• Current-Voltage Characteristics of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors in Ballistic Mode
• A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
• The Capacitance of Nano-Structures
• Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
• New Monte Carlo Simulation Technique for Quasi-Ballistic Transport in Ultrasmall Metal Oxide Semiconductor Field-Effect Transistors
• New Magnetic Flash Memory with FePt Magnetic Floating Gate
• Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
• Capacitance of Nanostructures
• Transport Characteristics of the Cross Junction of Atomic Chains
• New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation
• Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule
• New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission
• Capacitance of Nanostructures

もっと見る 閉じる

スポンサーリンク