NATORI Kenji | Institute of Applied Physics, University of Tsukuba

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概要

• Natori Kenjiの詳細を見る
• 同名の論文著者
• Institute of Applied Physics, University of Tsukubaの論文著者

関連著者

• NATORI Kenji

  Institute of Applied Physics, University of Tsukuba

• Natori Kenji

  Institute Of Applied Physics University Of Tsukuba

• SANO Nobuyuki

  Institute of Applied Physics, University of Tsukuba

• Sano Nobuyuki

  Institute Of Applied Physics The University Of Tsukuba

• Sano Nobuyuki

  Institute Of Applied Physics University Of Tsukuba

• Shimizu Tomo

  Institute Of Applied Physics University Of Tsukuba

• Natori K

  Univ. Tsukuba Ibaraki Jpn

• Kurusu Takashi

  Institute Of Applied Physics University Of Tsukuba

• 佐野 伸行

  筑波大学物理工学系

• 佐野 伸行

  筑波大 物理工学系

• Sano N

  Univ. Tsukuba Ibaraki Jpn

• MATSUZAWA Kazuya

  Semiconductor Technology Academic Research Center(STARC)

• MUKAI Mikio

  Semiconductor Technology Academic Research Center(STARC)

• Mukai Mikio

  Health-care Center Kinki Central Hospital

• Matsuzawa Kazuya

  Semiconductor Technology Academic Research Center (starc)

• Matsuzawa Kazuya

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation

• Matsuzawa Kazuya

  Semiconductor Technology Academic Research Center

• Matsuzawa K

  Toshiba Corp. Yokohama‐shi Jpn

• TOMIZAWA Masaaki

  NTT LSI Laboratories

• Uehara Tsuyoshi

  Institute Of Applied Physics University Of Tsukuba

• IKENOBE Tsuyoshi

  Institute of Applied Physics, University of Tsukuba

• Tomizawa Masaaki

  Ntt Lifestyle And Environmental Technology Labs

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著作論文

• Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
• Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
• Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
• Transport Characteristics of the Cross Junction of Atomic Chains
• A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
• Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
• The Resonant Tunneling Mode of a Single Electron Transistor
• Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
• Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
• Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
• Nanoscale Quasi-Ballistic MOSFETs in Reflection-Transmission Model
• Current-Voltage Characteristics of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors in Ballistic Mode

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