Tomizawa Masaaki | Ntt Lifestyle And Environmental Technology Labs
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概要
関連著者
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TOMIZAWA Masaaki
NTT LSI Laboratories
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Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
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YOSHII Akira
NTT LSI Laboratories
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Tomizawa M
Ntt System Electronics Lab. Kanagawa Jpn
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Yoshii A
Ntt Lsi Laboratories
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Maezawa Koichi
Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University
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Maezawa Koichi
Ntt Lsi Laboratories
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Mizutani Takashi
Ntt Lsi Laboratories
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ENOKI Takatomo
NTT LSI Laboratories
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ISHII Yasunobu
NTT LSI Laboratories
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Ishii Y
Waseda Univ. Tokyo Jpn
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Enoki Takatomo
Ntt Photonics Laboratories
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Ishii Y
Yamaguchi Univ. Ube‐shi Jpn
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Maezawa K
Graduate School Of Science And Engineering University Of Toyama
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Taniyama Hideaki
NTT LSI Laboratories
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Fujimoto Masahiro
Faculty Of Engineering Hiroshima University
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Sano Naokatsu
School Of Science Kwansei Gakuin University
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Sano N
Tokyo Inst. Technol. Tokyo Jpn
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ITO Hiroshi
NTT LSI Laboratories
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FURUTA Tomofumi
NTT LSI Laboratories
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ISHIBASHI Tadao
NTT LSI Laboratories
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SANO Nobuyuki
Institute of Applied Physics, University of Tsukuba
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NATORI Kenji
Institute of Applied Physics, University of Tsukuba
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Sano Nobuyuki
Institute Of Applied Physics University Of Tsukuba
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Sano Nobuyuki
Ntt Lsi Laboratories
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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FUKANO Hideki
NTT Opto-electronics Laboratories
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Ito Hiroki
Development Department Mitsubishi Electric Corporation
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Ito H
Department Of Energy And Environmental Science Graduate School Of Utsunomiya University
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AKEYOSHI Tomoyuki
NTT System Electronics Laboratories
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Akeyoshi Tomoyuki
NTT LSI Laboratories
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KURISHIMA Kenji
NTT LSI Laboratories
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Akeyoshi Tomoyuki
Ntt Photonics Laboratories Atsugi
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Fujimoto M
Taiyo Yuden Co. Ltd.
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FUJIMOTO Masatomo
NTT Opto-electronics Laboratories
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TAKANASHI Yoshifumi
NTT Opto-electronics Laboratories
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Seki Shunji
Ntt Optoelectronics Laboratories
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Umeda Y
Ntt Photonics Lab. Kanagawa Jpn
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Fukano Hideki
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Akeyoshi T
Ntt System Electronics Laboratories
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UMEDA Yohtaro
NTT LSI Laboratories
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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Umeda Yohtaro
Ntt Photonics Laboratories:(present Address)ntt Electronics Corporation
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Conti P
Ntt Lsi Laboratories
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Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
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Conti Paolo
NTT LSI Laboratories
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FUJINAGA Kiyohisa
NTT LSI Laboratories
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Takanashi Y
Ntt Opto-electronics Laboratories
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BENNETT Herbert
Semiconductor Electronics Division, National Institute of Standards and Technology
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LOWNEY Jeremiah
Semiconductor Electronics Division, National Institute of Standards and Technology
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Bennett Herbert
Semiconductor Electronics Division National Institute Of Standards And Technology
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Lowney Jeremiah
Semiconductor Electronics Division National Institute Of Standards And Technology
著作論文
- Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon
- InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer
- Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
- General-Purpose Device Simulation System with an Effective Graphic Interface
- Monte Carlo Study of Charge Injection Transistors (CHINTs)
- Simulation of Emitter Size Effects in the Coupled-Quantum-Well Base Resonant Tunneling Transistor
- Two-dimensional Analysis of Resonant Tunneling Using the Time-dependent Schrodinger Equation
- A System for 3D Simulation of Complex Si and Heterostructure Devices (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
- Photoluminescence of Si_Ge_ Quantum Wells Grown on (100)Si by Low-Pressure Chemical Vapor Deposition
- 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
- Monte Carlo Simulation of Response Time for Velocity Modulation Transistors
- Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations