Photoluminescence of Si_<0.83>Ge_<0.17> Quantum Wells Grown on (100)Si by Low-Pressure Chemical Vapor Deposition
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概要
- 論文の詳細を見る
PL measurements at 77 K are shown for Si_<0.83>Ge_<0.17> QWs grown on (100)Si at 550℃ by LPCVD. The relation between PL peak energies and QW widths shows good agreement with the theoretical one. The peak shift energy of multiple QWs as it relates to the Si barrier thickness is explained by the change in the ground state energy level of the minibands formed. The PL spectra show a very weak intensity for the D_1 line, reflecting defects in the QWs, whose defect density was below the TEM observation limit (<10^6 cm^<-2>). The QWs have precisely abrupt Si/SiGe interfaces with a λ value of 0.6 nm.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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FURUTA Tomofumi
NTT LSI Laboratories
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TOMIZAWA Masaaki
NTT LSI Laboratories
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FUJINAGA Kiyohisa
NTT LSI Laboratories
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Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
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