Monte Carlo Simulation of Response Time for Velocity Modulation Transistors

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概要

• 論文の詳細を見る

• We have studied the response time for velocity modulation transistors (VMTs) using particle Monte Carlo simulation. The intrinsic VMT model with zero gatesource spacing was used to avoid the change in total number of electrons due to the difference in source resistances between the two channels. The results show that the response time for VMTs is about half that for ordinary high electron mobility transistors (HEMTs). The remaining factor limiting the response time is the electron redistribution in the channel, which is shown to be caused by the difference in velocity-electric field characteristics in the two channels. A "virtual" VMT model with a single channel, where the impurity concentration is changed abruptly at a certain moment, has also been studied to clarify the effect of electr on redistribution.

• 社団法人応用物理学会の論文
• 1992-03-15

著者

• Maezawa Koichi

  Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University

• Maezawa Koichi

  Ntt Lsi Laboratories

• Mizutani Takashi

  Ntt Lsi Laboratories

• TOMIZAWA Masaaki

  NTT LSI Laboratories

• Maezawa K

  Graduate School Of Science And Engineering University Of Toyama

• Tomizawa Masaaki

  Ntt Lifestyle And Environmental Technology Labs

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