Drain Current DLTS Study of an AlGaAs/GaAs MISFET
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概要
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The deep levels in the AlGaAs/GaAs heterostructure MISFETs were investigated by means of a current DLTS technique. From the analysis of DLTS spectra, two kinds of electron traps, the activation energies of which were 0.15 ± 0.04 eV and 0.26 ± 0.08 eV, were found. The DLTS signal amplitude for the MISFETs normalized by the steady-state drain current was smaller by a factor of 7 ∼ 70 than that for HEMTs which were measured as a reference, suggesting the advantages of the MISFETs which employ undoped AlGaAs as a gate insulator.
- 社団法人応用物理学会の論文
- 1989-09-20
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