Effects of Impurity Scattering on Resonant Transmission Coefficients in GaAs/AlAs Double-Barrier Structures

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概要

• 論文の詳細を見る

• We investigate the effects of impurity scattering on resonant transmission coefficients in GaAs/AlAs double-barrier structures. The coefficients are estimated from d^2I/dV^2- V characteristics of resonant tunneling diodes, using a recently introduced method. To our knowledge, this is the first time that resonance level broadening due to ionized impurity scattering has been shown experimentally.

• 社団法人応用物理学会の論文
• 1992-07-01

著者

• Fukuyama Hiroyuki

  Department Of Chemistry And Materials Science Tokyo Institute Of Technology

• Fukuyama H

  Ntt System Electrics Lab. Kanagawa Jpn

• Fukuyama Hiroyuki

  Ntt Lsi Laboratories

• Mizutani Takashi

  Ntt Lsi Laboratories

• FUKUYAMA Hiroyuki

  Graduate School of Science and Engineering, Tokyo Institute of Technology

• WAHO Takao

  NTT LSI Laboratories

• Fukuyama H

  Tokyo Inst. Technol. Tokyo Jpn

• Waho T

  Ntt System Electronics Lab. Kanagawa Jpn

• Waho T

  Sophia Univ. Tokyo Jpn

• Waho T

  Department Of Electrical And Electronics Engineering Sophia University

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