Thin-Base InGaAs Heterojunction Bipolar Transistor with Parabolically Graded InGaAlAs Emitter
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概要
- 論文の詳細を見る
We describe an InGaAs heterojunction bipolar transistor lattice-matched to InP with a parabolically graded quaternary In(Ga_<1-x>Al_x)As emitter and a thin base. We obtain a room-temperature common-emitter DC current gain of more than 100, indicating the successful operation of the parabolic grading. High-frequency properties areequally prontising, with current gain cutoff frequencies up to 125 GHz. These studies provide evidence for a significant reduction of base and collector transit times at high current densities, due to the velocity overshoot effect.
- 社団法人応用物理学会の論文
- 1993-07-15
著者
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ISHIBASHI Tadao
NTT LSI Laboratories
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Kobayashi Takashi
NTT LSI Laboratories
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WAHO Takao
NTT LSI Laboratories
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KOCH Steffen
NTT LSI Laboratories
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