Effects of a Compositionally-Graded In_xGa_<1-x>As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Yamahata Shoji

  Ntt Photonics Laboratories

• NAKAJIMA Hiroki

  NTT Photonics Laboratories

• Nakajima H

  Ntt Photonics Laboratories

• Matsuoka Y

  Ntt Lsi Lab. Atsugi‐shi Jpn

• YAMAHATA Shoji

  NTT LSI Laboratories

• KURISHIMA Kenji

  NTT LSI Laboratories

• Kobayashi Takashi

  NTT LSI Laboratories

• Matsuoka Yutaka

  NTT LSI Laboratories

• Nakajima Hiroki

  NTT LSI Laboratories

• Matsuoka Yasunobu

  Central Research Laboratory Hitachi Ltd.

• Kobayashi Tetsuro

  The Faculty Of Engineering Science Osaka University

• Kobayashi T

  Osaka Univ. Toyonaka‐shi Jpn

• Kobayashi T

  Faculty Of Engineering Science Osaka University

• Yamaguchi S

  Faculty Of Agriculture University Of Ehime

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

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