Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors

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概要

• 論文の詳細を見る

• This paper discusses crystal-growth and device-design issues associated with the development of high-performance InP/InGaAs heterostructure bipolar transistors (HBTs). It is shown that a highly Si-doped n^+-subcollector in the HBT structure causes anomalous Zn redistribution during metalorganic vapor phase epitaxial (MOVPE) growth. A thermodynamical model of and a useful solution to this big problem are presented. A novel hybrid structure consisting of an abrupt emitter-base heterojunction and a compositionally-graded base is shown to enhance nonequilibrium base transport and thereby increase current gain and cutoff frequency f_T. A double-heterostructure bipolar transistor (DHBT) with a step-graded InGaAsP collector can improve collector breakdown behavior without any speed penalty. We also elucidate the effect of emitter size shrinkage on high-frequency performance. Maximum oscillation frequency f_ltmaxgt in excess of 250 GHz is reported.

• 社団法人電子情報通信学会の論文
• 1995-09-25

著者

• Yamahata Shoji

  Ntt Photonics Laboratories

• NAKAJIMA Hiroki

  NTT Photonics Laboratories

• Nakajima H

  Ntt Photonics Laboratories

• Matsuoka Y

  Ntt Lsi Lab. Atsugi‐shi Jpn

• YAMAHATA Shoji

  NTT LSI Laboratories

• KURISHIMA Kenji

  NTT LSI Laboratories

• Nakajima Hiroki

  NTT Wireless Systems Laboratories

• Kobayashi Takashi

  NTT LSI Laboratories

• Matsuoka Yutaka

  NTT LSI Laboratories

• Matsuoka Yasunobu

  Central Research Laboratory Hitachi Ltd.

• Kobayashi Tetsuro

  The Faculty Of Engineering Science Osaka University

• Kobayashi T

  Osaka Univ. Toyonaka‐shi Jpn

• Kobayashi T

  Faculty Of Engineering Science Osaka University

• Yamaguchi S

  Faculty Of Agriculture University Of Ehime

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

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