Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-06-15

著者

• Yamahata Shoji

  Ntt Photonics Laboratories

• Shigekawa Naoteru

  NTT Photonics Laboratories

• ITO Hiroshi

  NTT LSI Laboratories

• Ito Hiroki

  Development Department Mitsubishi Electric Corporation

• Ito H

  Department Of Energy And Environmental Science Graduate School Of Utsunomiya University

• MATSUOKA Yutaka

  NTT Opto-electronics Laboratories

• Matsuoka Y

  Ntt Lsi Lab. Atsugi‐shi Jpn

• YAMAHATA Shoji

  NTT LSI Laboratories

• SHIGEKAWA Naoteru

  NTT LSI Laboratories

• KURISHIMA Kenji

  NTT LSI Laboratories

• Shigekawa Naoteru

  Ntt Science & Core Technology Laboratory

• Shigekawa Naoteru

  Institute For Solid State Physics The University Of Tokyo:electro-communication Laboratory Ntt K.k.

• Matsuoka Yasunobu

  Central Research Laboratory Hitachi Ltd.

• Yamaguchi S

  Faculty Of Agriculture University Of Ehime

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

関連論文

• 22pZF-5 極紫外FELによる原子・クラスター多重イオン化実験III. : クラスター多重イオン化のレーザー波長・レーザー強度依存性(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
• 22pZF-4 極紫外FELによる原子・クラスター多重イオン化実験II. : クラスター多重イオン化のサイズ依存性(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
• 22pZF-3 極紫外FELによる原子・クラスター多重イオン化実験I. : 反跳イオン運動量分光による高次光分布測定(22pZF 原子・分子,領域1(原子・分子,量子エレクトロニクス,放射線物理))
• 軟X線多層膜鏡の形状誤差補正のための大面積イオン銃を用いたミリング装置の開発
• 超高精細バイオイメージング用波面補正軟X線多層膜ミラーの開発
• 傾斜エリプソメトリーによる3次元形状計測 (特集 偏光計測)
• 偏光利用による3次元リアルタイム計測法の開発
• 正反射による物体表面の傾斜エリプソメトリー : 精密実時間形状計測への基本概念
• X線ミラー多層膜 (特集欄 ナノテクノロジーにおけるものづくり) -- (真空中で作製するナノ構造)
• 軟X線多層膜光学
• 水晶振動子を用いたバイブロスキャニング法による非導電体の微細形状計測
• バイブロスキャニング法を用いた微細形状測定システムの開発
• バイブロスキャニング法の微細放電加工機への実装検討 : 微細放電加工機上での微細加工形状のオンマシン測定の試み
• 反射波面補正のためにイオンミリングした軟X線多層膜鏡の評価
• 軟X線顕微鏡用精密多層膜ミラーの開発
• P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
• Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
• Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
• Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
• Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
• Generation of Sub-picosecond GeV Electron Bunches by Laser Acceleration in Vacuum
• Reflection-Induced Light Correlation in Spontaneous Emission in Front of a Mirror
• Laser Emission from Dye-Doped Small Spheres by Ultraviolet N_2 Laser Pumping
• Highly Reliable Operation of InGaAlAs Waveguide Photodiodes for Optical Access Network Systems
• High Responsivity, Low Dark Current, and Highly Reliable Operation of InGaAIAs Waveguide Photodiodes for Optical Hybrid Integration (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
• Clostridium difficile トキシン迅速検査キットの評価と微生物学的検討
• Rotary Ultrasonic Motor Using Symmetric Contour Vibration of Rectangular Plate
• Ultrasonic Flat Motor Using Coupling of Longitudinal and Flexural Vibration Modes
• Resonant Frequency Deviation of Ultrasonic Flat Motor Caused by Rotor Pressure : Ultrasonic Motor, Actuator and Transducer
• Rotary Ultrasonic Flat Motor : High Power Ultrasonics
• Reversible Ultrasonic Flat Motor Drived by Single Phase Driver : P: PIEZOELECTRICS
• High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
• High-Power Characteristics of Multilayer Piezoelectric Ceramic Transducers
• Small Multilayer Piezoelectric Transformers with High Power Density : Characteristics of Second and Third-Mode Rosen-Type Transformers
• Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
• 1.3-μm Surface-Normal Reflective Optical Modulators Based on the Wannier-Stark Effect in InP/InGaAsP Superlattices
• Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
• Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
• Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
• Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
• Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
• Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
• Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
• Slicing and Adding of Short Microwave Pulse by Laser Produced Plasma : Nuclear Science, Plasmas, and Electric Discharges
• IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
• High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
• Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
• A Monte Carlo Supercell Approach for the Effects of Disorder on the Upper-Valley Electronic Properties in InGaAs Ternary Alloys
• Alkylation and Acylation of the 1,2,3-Triazole Ring
• Enlerged Frequency Upshift from DC to AC Radiation Converter using Boundary Effect of Plasma-filled Waveguide
• Proton Acceleration in Transverse Laser Wake Fields
• Further Frequency Upshift in DC to AC Radiation Converter by Perpendicular DC Magnetic Field
• Emission of Short Microwave Pulse Radiated by Interaction between Periodic Static Electric Field and Relativistic Ionization Front
• Electronic NO_2 Sensor Using Merocyanine-Doped Langmuir Blodgett Films
• Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
• Ionized Cluster Beam Deposition Source for Aluminum and Aluminum Oxide Formation : Ion Beam Process
• Ionized Cluster Beam Deposition Source for Aluminum and Aluminum Oxide Formation
• Selenium Thin-Film Solar Cell
• Selenium Thin Film Transistor
• Selenium Thin Film Solar Cell : I-3: NEW STRUCTURE AND ADVANCED MATERIAL (1)
• InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
• InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
• Expanded-Bed Protein Refolding Using a Solid-Phase Artificial Chaperone
• Monitoring of the Refolding Process for Immobilized Firefly Luciferase with a Biosensor Based on Surface Plasmon Resonance
• Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
• Breathing Monitor Using Dye-Doped Optical Fiber
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
• Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
• Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
• Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
• Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
• Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
• Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
• Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
• Studies of Constrained Dynamics of the Phase Transition in the Artificial Bilayer Membrane of Dialkyl Ammonium Amphiphile by Quasielastic Neutron Scattering
• Second- and Third-Harmonic Generation of Nd:Glass Laser in Fast Red ITR Organic Crystal Fiber : Waves, Optics and Quantum Electronics
• Electro-Optic Intensity Modulator Using a Novel Urethane-Urea Copolymer
• A 35-GHz, 0.8-A/W and 26-μm Misalignment Tolerance Microlens-Integrated p-i-n Photodiodes
• Electroluminescence from am Inlays-Based High Electron Mobility Transistor Designed for High-Speed Operation
• Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
• Influeruce of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quarntum-Well Lasers
• Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates
• The Korean Tea Plant (Camellia sinensis) : RFLP Analysis of Genetic Diversity and Relationship to Japanese Tea
• High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
• Fiber Humidity Sensor Using Fluorescent Dye-Doped Plastics
• Surface Recombination Velocity in p-Type GaAs
• Gas Source MBE Growth of GaSb
• Synthesis of (.+-.)-8-Deisopropyladunctin B
• Sn Incorporation in GaAs by Molecular Beam Epitaxy
• PS-107-6 HEMS-ICG冠動脈造影法を用いたバイパスグラフト血流定量評価法の検討(PS-107 心臓 虚血性疾患,ポスターセッション,第112回日本外科学会定期学術集会)
• SF-101-2 酸化ビリルビンを指標とした全身性炎症反応症候群での酸化ストレス動態(SF-101 サージカルフォーラム(101)侵襲・再生,第112回日本外科学会定期学術集会)
• 25Gb/s 150-m Multi-Mode Fiber Transmission Using a CMOS-Driven 1.3-µm Lens-Integrated Surface-Emitting Laser
• Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
• Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors

もっと見る 閉じる

スポンサーリンク