Gas Source MBE Growth of GaSb
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概要
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Gas source molecular beam epitaxal growth of GaSb is investigated. Sb(CH_3)_3 is found to decompose effectively when the cracking furnace temperature is higher than 800℃. A mirror-like GaSb epi-layer is shown to be obtainable using Sb(CH_3)_3 and a solid Ga surce for the first time.
- 社団法人応用物理学会の論文
- 1988-08-20
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