ITO Hiroshi | NTT LSI Laboratories
スポンサーリンク
概要
関連著者
-
ITO Hiroshi
NTT LSI Laboratories
-
ISHIBASHI Tadao
NTT LSI Laboratories
-
Ito H
Ntt Photonics Laboratories Ntt Corporation
-
NITTONO Takumi
NTT LSI Laboratories
-
NAKAJIMA Osaake
NTT LSI Laboratories
-
Nittono T
Ntt System Electronics Laboratories
-
Nagata Kyoichi
Nec Corporation
-
Watanabe N
Ntt Photonics Laboratories
-
WATANABE Noriyuki
NTT Photonics Laboratories
-
WATANABE Noriyuki
NTT LSI Laboratories
-
NAGATA Koichi
NTT LSI Laboratories
-
Ito Hiroki
Development Department Mitsubishi Electric Corporation
-
Ito H
Department Of Energy And Environmental Science Graduate School Of Utsunomiya University
-
KURISHIMA Kenji
NTT LSI Laboratories
-
Ishibashi T
Ntt Photonics Laboratories
-
YAMAHATA Shoji
NTT LSI Laboratories
-
SHIGEKAWA Naoteru
NTT LSI Laboratories
-
Watanabe Norikazu
Electrotechnical Lanoratory
-
Watanabe N
Mitsubishi Materials Corp. Omiya Jpn
-
Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
-
WATANABE Noemia
Laboratorio de Quartzo, Departamento de Materiais, Faculdade de Engenharia Mecanica, UNICAMP
-
Yamahata Shoji
Ntt Photonics Laboratories
-
Shigekawa Naoteru
NTT Photonics Laboratories
-
Shigekawa Naoteru
Ntt Science & Core Technology Laboratory
-
Shigekawa Naoteru
Institute For Solid State Physics The University Of Tokyo:electro-communication Laboratory Ntt K.k.
-
Yamaguchi S
Faculty Of Agriculture University Of Ehime
-
Makimura Takashi
NTT LSI Laboratories
-
SUGAHARA Hirohiko
NTT LSI Laboratories
-
FURUTA Tomofumi
NTT LSI Laboratories
-
TOMIZAWA Masaaki
NTT LSI Laboratories
-
MATSUOKA Yutaka
NTT Opto-electronics Laboratories
-
Matsuoka Y
Ntt Lsi Lab. Atsugi‐shi Jpn
-
Matsuoka Yasunobu
Central Research Laboratory Hitachi Ltd.
-
ENOKI Takatomo
NTT LSI Laboratories
-
ISHII Yasunobu
NTT LSI Laboratories
-
Ishii Y
Waseda Univ. Tokyo Jpn
-
Harris Jr.james
Solid State Electronics Laboratory Stanford University
-
Harris Jr.
Solid State Electronics Laboratory Stanford University
-
Enoki Takatomo
Ntt Photonics Laboratories
-
Ishii Y
Yamaguchi Univ. Ube‐shi Jpn
-
Yamauchi Yoshiki
NTT LSI Laboratories
-
NAGATA Koich
NTT LSI Laboratories
-
Furuta Tomofumi
Ntt Photonic Laboratories Ntt Corpration
-
Tomizawa M
Ntt System Electronics Lab. Kanagawa Jpn
-
Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
-
Ito H
Toyota Central R&d Laboratories Inc.
-
Yamahata Shoji
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
-
Jr. Jr.
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94025, U.S.A.
著作論文
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
- Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
- Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
- Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
- Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
- Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
- Influeruce of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quarntum-Well Lasers
- Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates
- Surface Recombination Velocity in p-Type GaAs
- Gas Source MBE Growth of GaSb
- Sn Incorporation in GaAs by Molecular Beam Epitaxy
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition