NITTONO Takumi | NTT LSI Laboratories

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概要

• 同名の論文著者
• NTT LSI Laboratoriesの論文著者

関連著者

• NITTONO Takumi

  NTT LSI Laboratories

• ITO Hiroshi

  NTT LSI Laboratories

• Nittono T

  Ntt System Electronics Laboratories

• Ito H

  Ntt Photonics Laboratories Ntt Corporation

• Watanabe N

  Ntt Photonics Laboratories

• WATANABE Noriyuki

  NTT Photonics Laboratories

• WATANABE Noriyuki

  NTT LSI Laboratories

• NAKAJIMA Osaake

  NTT LSI Laboratories

• ISHIBASHI Tadao

  NTT LSI Laboratories

• Watanabe Norikazu

  Electrotechnical Lanoratory

• Nagata Kyoichi

  Nec Corporation

• Watanabe N

  Mitsubishi Materials Corp. Omiya Jpn

• WATANABE Noemia

  Laboratorio de Quartzo, Departamento de Materiais, Faculdade de Engenharia Mecanica, UNICAMP

• NAGATA Koichi

  NTT LSI Laboratories

• Ishibashi T

  Ntt Photonics Laboratories

• SUGAHARA Hirohiko

  NTT LSI Laboratories

• FURUTA Tomofumi

  NTT LSI Laboratories

• Ito Hiroki

  Development Department Mitsubishi Electric Corporation

• Ito H

  Department Of Energy And Environmental Science Graduate School Of Utsunomiya University

• Yamauchi Yoshiki

  NTT LSI Laboratories

• Makimura Takashi

  NTT LSI Laboratories

• NAGATA Koich

  NTT LSI Laboratories

• Furuta Tomofumi

  Ntt Photonic Laboratories Ntt Corpration

• Ito H

  Toyota Central R&d Laboratories Inc.

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著作論文

• Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
• Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
• Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
• Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
• Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
• Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
• Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices

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