Watanabe N | Ntt Photonics Laboratories
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概要
関連著者
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Watanabe N
Ntt Photonics Laboratories
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WATANABE Noriyuki
NTT Photonics Laboratories
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Watanabe Norikazu
Electrotechnical Lanoratory
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WATANABE Noemia
Laboratorio de Quartzo, Departamento de Materiais, Faculdade de Engenharia Mecanica, UNICAMP
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Watanabe N
Mitsubishi Materials Corp. Omiya Jpn
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渡辺 昇
Kek
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渡辺 昇
高エネ研
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Watanabe Noboru
National Laboratory For High Energy Physics
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Ishibashi T
Ntt Photonics Laboratories
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Ito H
Ntt Photonics Laboratories Ntt Corporation
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Furuta Tomofumi
Ntt Photonic Laboratories Ntt Corpration
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NITTONO Takumi
NTT LSI Laboratories
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WATANABE Noriyuki
NTT LSI Laboratories
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ITO Hiroshi
NTT LSI Laboratories
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Kihara H
Tokyo And Osaka Universities
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Taniguchi M
Department Of Applied Physics Faculty Of Engineering Osaka University
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Nittono T
Ntt System Electronics Laboratories
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Kihara H
Nagoya Univ. Nagoya Jpn
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KIHARA Hiroshi
Jichi Medical School, School of Nursing
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Taniguchi M
Department Of Physics Faculty Of Science Nagoya University
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Kihara Hiroshi
Jichi Medical School School Of Nursing::(present Address)physics Laboratory Department Of The Libera
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Kihara H
Takara Shuzo Co. Ltd. Shiga Jpn
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Kihara Hiroshi
Jichi Mecical School School Ofnursing
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KODAMA Satoshi
NTT Photonics Labs., NTT Corporation
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ITO Hiroshi
NTT Photonics Labs., NTT Corporation
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渡辺 昇
高エネルギー研
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山本 雅彦
阪大工
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古坂 道弘
東北大・理
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KIYANAGI Yoshiaki
Department of Nuclear Engineering,Faculty of Engineering,Hokkaido University
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Yamamoto Masanobu
Sony Corp. Tokyo Jpn
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FURUTA Tomofumi
NTT Photonics Laboratories
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KANDA Atsushi
NTT Photonics Laboratories
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MURAGUCHI Masahiro
NTT Electronics Corporation
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ISHIBASHI Tadao
NTT Photonics Laboratories
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SHIMIZU Naofumi
NTT System Electronics Laboratories
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WATANABE Noriyuki
NTT System Electronics Laboratories
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FURUTA Tomofumi
NTT System Elecrronics Laboratories
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ISHIBASHI Tadao
NTT System Electronics Laboratories
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ISHIBASHI Tadao
NTT LSI Laboratories
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Yamamoto M
Ntt System Electrics Lab. Kanagawa Jpn
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Zhao Y
Changchun Inst. Physics Chinese Acad. Sci. Changchun Chn
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Arai M
National Institute For Materials Science
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Arai M
Department Of Applied Physics University Of Tokyo
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Arai Masao
National Institute For Research In Inorganic Materials
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Hiroshima H
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kanda Atsushi
Ntt Photonics Laboratories Ntt Corporation
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Koyanagi S
Hokkaido Univ. Sapporo Jpn
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Kodama S
Ntt Photonics Lab. Kanagawa Jpn
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WATANABE Norio
Department of Physics, Faculty of Science, Nagoya University
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SHIMANUKI Yoshio
School of Dental Medicine, Tsurumi University
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TANIGUCHI Mieko
Department of Physics, Faculty of Science, Nagoya University
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Taniguchi Mieko
Department Of Physics Faculty Of Science Nagoya University
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Arai M
Computational Materials Science Center (cmsc) National Institute Of Materials Science (nims)
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Moriyama Masaki
Department Of Physics Hokkaido University Of Education
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SHIMIZU Naofumi
NTT Network Innovation Laboratories
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KOMURO Masanori
Electrotechnical Laboratory
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HIROSHIMA Hiroshi
Electrotechnical Laboratory
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Shimizu Naofumi
The Authors Are With Ntt Network Innovation Laboratories
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Kamiyama Takashi
Institute Of Materials Science The University Of Tsukuba
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Muraguchi Masahiro
Currently With Ntt Electronics Co. Ltd.
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Muraguchi Masahiro
Ntt Photonics Laboratories
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Arai M
Univ. Tokyo Tokyo Jpn
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Kiyanagi Y
Hokkaido Univ. Sapporo
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Komuro M
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Muraguchi M
Ntt Electronics Corporation
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Kawakita Y
Department Of Physics Faculty Of Sciences Kyushu University
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ZHAO Yi
Research Center, Nihon Micro Coating Co., Ltd.
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WATANABE Nobuyoshi
Research Center, Nihon Micro Coating Co., Ltd.
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WATANABE Nobuo
Canon Inc.Research Center
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TSUKAMOTO Takeo
Canon Inc.Research Center
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OKUNUKI Masahiko
Canon Inc.Research Center
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Iwamura Yasuo
Department of Elecltric Engineering, Kanagawa Univetsity
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Moriyama Makoto
Department of Elecltric Engineering, Kanagawa Univetsity
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Watanabe Naozo
Department of Elecltric Engineering, Kanagawa Univetsity
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Kiyanagi Yoshiaki
Department Of Nuclear Engineering Faculty Of Engineering Hokkaido University
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Kiyanagi Yoshiaki
Department Of Nuclear Engineering Hokkaido University
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Kodama Satoshi
Ntt Photonics Labs. Ntt Corporation
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Iwamura Y
Mitsubishi Heavy Ind. Ltd. Yokohama Jpn
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Watanabe Nobuyoshi
Research Center Nihon Micro Coating Co. Ltd.
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Shimanuki Y
Mitsubishi Materials Silicon Corp. Chiba Jpn
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Shimanuki Yasushi
Central Research Institute Mitsubishi Metal Corporation
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Arai Masao
Computational Materials Science Center National Institute For Materials Science
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Kodama Satoshi
Ntt Photonics Laboratories
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Watanabe Norio
Department Of Mathematical Sciences School Of Science And Engineering Tokyo Denki University
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古坂 道弘
北海道大学
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Tsukamoto T
Canon Inc.research Center
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Tsukamoto Takeo
Canon Inc. Canon Research Center
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Watanabe Norio
Department Of Industrial And Systems Engineering Chuo University
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古坂 道弘
北大院工
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古坂 道弘
北海道大学大学院工学研究院量子理工学部門
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Ishibashi Tadao
NTT Photonic Laboratories, NTT Corpration
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Ito Hiroshi
NTT Photonics Laboratories, NTT Corporation
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渡辺 昇
高エネルギー物理学研究所
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KIYANAGI Yoshiaki
Department of Atomic Energy, Faculty of Engineering, Hokkaido University
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Watanabe Norio
Department of Chemistry, Faculty of Science, Gakushuin University
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大友 季哉
高エ研
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泉 富士夫
無機材研
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鬼柳 善明
北大院工
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芝崎 啓之
神戸大理
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新井 正敏
神戸大理
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伊藤 晋一
高エネ研
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佐藤 節夫
Kek
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伊藤 晋一
物構研
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石垣 徹
茨城大学フロンティア応用原子科学研究センター設立準備室
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石垣 徹
室蘭工大工
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鬼柳 善明
北大工
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浅野 肇
筑波大学物質工学系
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古坂 道弘
高エネ研
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山田 安定
東京大学物性研究所
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古坂 道弘
KEK
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沼尻 正晴
高エネ研
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INABA Akira
Department of Chemistry,Faculty of Science,Osaka University
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柴田 清孝
岩手大 工
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浅野 肇
筑波大学 工学研究科
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及川 健一
Center For Proton Accelerator Facility Jaeri
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泉 冨士夫
無機材研
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山下 洋
京都大学フィールド科学教育研究センター舞鶴水産実験所里海生態保全学分野
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ARAI Masatoshi
Department of Physics, Kobe University
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及川 健一
筑波大学
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神山 崇
筑波大学
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太田 泉
筑波大学
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鎌田 功穂
筑波大学
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土屋 尚久
筑波大学
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藤川 勲
KEK
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石垣 徹
室蘭工大・工
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大友 季哉
高エネ研
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IKEDA Susumu
National Laboratory for High Energy Physics
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INOUE Kazuhiko
Department of Nuclear Engineering,Faculty of Engineering,Hokkaido University
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TAKEDA Sadamu
Department of Chemistry,Faculty of Science,Osaka University
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KANAYA Toshiharu
Institute for Chemical Research,Kyoto University
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SHIBATA Kaoru
Institute for Material Research,Tohoku University
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KAMIYAMA Takashi
Institute for Material Research,Tohoku University
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IZUMI Yoshinobu
Macromolecular Research Laboratory,Faculty of Engineering,Yamagata University
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OZAKI Yoshiaki
Department of Chemistry,Nagoya Institute of Technology
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J. CARLILE
ISIS Pulsed Nertron Facility,Rutherford Appleton Laboratory
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小川 雪郎
北大工
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KANDA Atsushi
NTT Network Innovation Labs.
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MURAGUCHI Masahiro
NTT Network Innovation Labs.
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WATANABE Noriyuki
NIT LSI Laboratories
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ITO Hiroshi
NIT LSI Laboratories
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ISHIBASHI Tadao
NIT LSI Laboratories
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SUGAHARA Hirohiko
NTT LSI Laboratories
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NAGATA Koichi
NTT LSI Laboratories
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NAKAJIMA Osaake
NTT LSI Laboratories
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FURUTA Tomofumi
NTT LSI Laboratories
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神山 崇
筑波大学物質工学系
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Ikeda Susumu
Graduate School Of Science And Engineering Yamagata University
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Inoue K
School Of High Energy Accelerator Science The Graduate University For Advanced Studies:institute For
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Inoue K
Department Of Nuclear Engineering Hokkaido University
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Ito Hiroki
Development Department Mitsubishi Electric Corporation
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須田 義之
北大工
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土屋 尚久
筑波大物質工
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Ito H
Department Of Energy And Environmental Science Graduate School Of Utsunomiya University
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NAKAMURA Noriko
Research Institute, Ishikawajima-Harima Heavy Industries Co., Ltd.
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SUGIYAMA Masaru
Hamamatsu Photonics K.K., Central Research Laboratory
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OHBA Akira
Hamamatsu Photonics K.K., Central Research Laboratory
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FUJISAKI Hisao
Research Development Corporation of Japan, Yoshida Nano-Mechanism Project
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NAKAGIRI Nobuyuki
Research Development Corporation of Japan, Yoshida Nano-Mechanism Project
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WATANABE Norio
Nagoya University, Department of Physics
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TANIGUCHI Mieko
Nagoya University, Department of Physics
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稲村 泰弘
神戸大理
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Inoue Katsuya
School Of High Energy Accelerator Science The Graduate University For Advanced Studies:institute For
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Arai Michio
Sony Corporation Research Center
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Kamiyama Takashi
Instiiute Of Materials Science University Of Tsukuba
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Arai Masatoshi
Department Of Physics Kobe University
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KASAHARA Jiro
Sony Corporation Research Center
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WATANABE Naozo
Sony Corporation Research Center
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Ohba A
Kyushu Univ. Fukuoka Jpn
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J. Carlile
Isis Pulsed Nertron Facility Rutherford Appleton Laboratory
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Inaba Akira
Department Of Chemistry Faculty Of Science Osaka University
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Kanaya T
Institute For Chemical Research Kyoto University
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Kasahara Jiro
Department Of Aerospace Engineering Nagoya University
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Kasahara Jiro
Sony Corporation Materials Laboratory
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Takeda Sadamu
Department Of Chemistry Faculty Of Science Osaka University
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Nagata Kyoichi
Nec Corporation
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Hasegawa Norio
Research Laboratories Torii And Co. Ltd.
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Hasegawa Norio
Research Center Nihon Micro Coating Co. Ltd.:(present Address) Fukushima
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Fujisaki Hisao
Research Development Corporation Of Japan Yoshida Nano-mechanism Project:(present Address)nikon Tsuk
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Ozaki Yoshiaki
Department Of Chemistry Nagoya Institute Of Technology
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Shibata K
Meteorological Research Institute
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Izumi Yoshinobu
Macromolecular Research Laboratory Faculty Of Engineering Yamagata University
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YAMAMOTO Motokazu
Research Center, Nihon Micro Coating Co., Ltd.
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YAMAMOTO Motokazu
Department of Applied Science, Faculty of Engineering, Tokyo Denki University
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GE Bingheng
Research Center, Nihon Micro Coating Co., Ltd.
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Sugiyama Masaru
Hamamatsu Photonics K.k. Central Research Laboratory
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佐藤 節夫
高エネ研
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Nakagiri Nobuyuki
Research Development Corporation Of Japan Yoshida Nano-mechanism Project:(present Address)nikon Rese
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Arai Masatoshi
Department Of Physics Faculty Of Science Tohoku University
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Inoue Kazuhiko
Department Of General Medicine Kawasaki Medical School
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Nakamura Noriko
Research Center Nihon Micro Coating Co. Ltd.
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Ge Bingheng
Research Center Nihon Micro Coating Co. Ltd.
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Yamamoto Motokazu
Department Of Applied Science Faculty Of Engineering Tokyo Denki University
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Ikeda Susumu
National Laboratory For Hegh Energy Physics
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SHIBATA Kaoru
Institute for Materials Research, Tohoku University
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Inoue Kazuko
Department of Applied Molecular Science Institute for Molecular Science : Faculty of Science, Hiroshima University
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INOUE Kazuhiko
Department of Comprehensive Medicine, Kawasaki Medical School
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石垣 徹
室蘭工大
著作論文
- 28a-YM-2 KEKの新粉末中性子回折装置
- High Resolution Neutron Spectrometer LAM-80ET and Rotational Tunnelling in 4-Methypyridine N-Oxide
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Carbon Doping in AlGaAs Using Trimethylarsine by Metalorganic Chemical Vapor Deposition with a High-Speed Rotating Susceptor
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
- Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
- Soft X-Ray Microscope with Zone Plates at UVSOR I : Performance
- Observation of Wet Biological Specimen by Soft X-Ray Microscope with Zone Plates at UVSOR
- Focusing Efficiency and Resolution of a Nickel Phase Zone Plate for Soft X-rays
- 29p-P-13 高エネルギー陽子による中性子の生成
- 大型スポレ-ション中性子源による中性子散乱
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Magnetic Anisotropy Caused by the Directivity of Ni Grown in Amorphous Ni-P Alloy due to Abrasion
- Inductive Effect of Magnetic Field on Crystal Growth in Amorphous-Ni-P Alloy
- Al/GaAs Schottky Diode Implanted by Focused Ion Beam : Beam-Induced Physics and Chemistry
- Focused Ga Ion Beam Etching of Si in Chlorine Gas : Etching and Deposition Technology
- New Light Modulator Using GaSe Layered Crystal
- Al/GaAs Schottky Diode Implanted by Focused Ion Beam
- Focused Ga Ion Beam Etching of Si in Chlorine Gas
- Anomalously Large Shift of Absorption Edge of GaSe-Based Layered Crystal by Applied Electric Field
- Comparison of Slow-Neutron Intensities in Pulsed Spallation Neutron Sources with Various Proton Energies 0.8-3 GeV
- Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
- 2. わが国に於ける中性子散乱設備 : 将来の展望: パルス中性子源について ( 中性子散乱研究の新しい展開)
- 1. 中性子散乱研究への招待 ( 中性子散乱研究の新しい展開)