大型スポレ-ション中性子源による中性子散乱
スポンサーリンク
概要
著者
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渡辺 昇
Kek
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渡辺 昇
高エネ研
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Watanabe Noboru
National Laboratory For High Energy Physics
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Watanabe N
Ntt Photonics Laboratories
関連論文
- 13a-T-3 LAM型通常および高分解能準弾性散乱分光器とそれらの分子科学への応用
- 24p-ZA-13 高分解能中性子分光によるトンネルモードの研究
- Fermi Surface Properties of the Enhanced Pauli Paramagnet UAl_3 : Condensed Matter: Electronic Properties, etc.
- 28a-YM-2 KEKの新粉末中性子回折装置
- High Resolution Neutron Spectrometer LAM-80ET and Rotational Tunnelling in 4-Methypyridine N-Oxide
- 4a-N-2 液体GaSbの構造 : 中性子散乱
- 4a-BC-7 KENSを利用した中程度分解能粉末中性子回折装置(MRP)
- 28a-L-1 eV中性子分光
- 4a-BC-8 スパレーション・パルス冷中性子源による高分解能粉末中性子回折
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Carbon Doping in AlGaAs Using Trimethylarsine by Metalorganic Chemical Vapor Deposition with a High-Speed Rotating Susceptor
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
- Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
- 2p-M-8 TaH_x の局在モード
- TaHxの局在モ-ド
- 7p-M-13 Va族遷移金属-水素系合金の構造
- 2p-S-1 KENS高速全散乱型中性子分光器(HIT)
- High-Field Magnetization of USn_3 and UPb_3
- Quasi-Two Dimensional Fermi Surface Properties of the Antiferromagnet UNiGa_5 : Condensed Matter: Electronic Properties, etc.
- Magnetoresistance and de Haas-van Alphen Effect in U_3As_4 and U_3P_4 : Condensed Matter: Electronic Properties, etc.
- Shubnikov-de Haas Effect Study of Cylindrical Fermi Surfaces in UP_2 : Condensed Matter: Electronic Properties, etc.
- Fermi Surface Properties of USi_3 : Condensed Matter: Electronic Properties, etc.
- Crystal Growth and Cylindrical Fermi Surfaces of USb_2
- 3p-PS-90 Pd_2MnSnの中性子回折
- Soft X-Ray Microscope with Zone Plates at UVSOR I : Performance
- Observation of Wet Biological Specimen by Soft X-Ray Microscope with Zone Plates at UVSOR
- Focusing Efficiency and Resolution of a Nickel Phase Zone Plate for Soft X-rays
- Neutron Powder Diffraction from Polymorphs of BaPb_Bi_O_3 : Electrical Properties of Condensed Matter
- 29p-P-13 高エネルギー陽子による中性子の生成
- 4p-A-3 中性子散乱によるAs_2S_3グラスの光構造変化の観察
- 12p-D-1 TOF中性子散乱による鉛ガラスの構造解析
- 6p-P-5 V_2Hの中性子非弾性散乱
- 6a-B-10 Ta-H系の中性子非干渉性非弾性散乱
- 大型スポレ-ション中性子源による中性子散乱
- Crystal Structure of the Superconductor Ba_Nd_Cu_3O_
- 29p-Q-7 Nuclear Spallationを用いた中性子ビームの開発
- 28p-N-4 大型ハドロン計画における中性子ファシリティ(Nアレナ)の現状
- 28p-N-4 大型ハドロン計画における中性子ファシリティ(Nアレナ)の現状
- Neutron Diffraction Study on the Low-Temperature Monoclinic Form of PrCu_6
- Neutron Diffraction Study on the Low-Temperature Monoclinic Form of CeCu_6
- Local Modes and Hydrogen Potentials in Metal Hydrides
- パルス中性子で見る高温超伝導酸化物YBa_2Cu_3O_&tl;7-δ>
- 27p-PS-13 RBa_2Cu_3O_(R=Y, Dy)のマイスナー効果の温度履歴 (III) : 結晶構造
- 28a-H-9 変形したPd_2MuSnの高分解能粉末中性子回折 : profile fitting
- 2p-M-6 時間集点型結晶アナライザー法による熱外中性子散乱
- 時間焦点型クリスタル・アナライザ-法による熱外中性子散乱
- 29a-R-11 遷移金局中水素の局在モード
- Crystal Structure of Ba_2ErCu_3O_ Determined by Neutron Powder Diffraction
- Crystal Structure of Ba_2HoCu_3O_ Determined by Neutron Powder Diffraction
- Neutron Diffraction Study of Nonstoichiometry in Ba_La_Cu_3O_y : Electrical Properties of Condensed Matter
- High Resolution Neutron Powder Diffractometer with a Solid Methane Moderator at Pulsed Spallation Neutron Source
- Spin Dynamics near the Superconductor-to-Insulator Transition in Impurity-Doped YBa_2Cu_4O_8
- Magnetic Correlation near Impurities in YBa_2(Cu_M_x)_4O_8 (M=Ni, Zn) via Cu Nuclear Spin-Lattice Relaxation : Condensed Matter: Electronic Properties, etc.
- Cu NQR Study of Impurity and Host Spin Dynamics in YBa_2(Cu_Ni_x)_4O_8
- Short Range Structural Analysis of Lead Silicate Glasses by Pulsed Neutron Total Scattering
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Magnetic Anisotropy Caused by the Directivity of Ni Grown in Amorphous Ni-P Alloy due to Abrasion
- Inductive Effect of Magnetic Field on Crystal Growth in Amorphous-Ni-P Alloy
- Al/GaAs Schottky Diode Implanted by Focused Ion Beam : Beam-Induced Physics and Chemistry
- Focused Ga Ion Beam Etching of Si in Chlorine Gas : Etching and Deposition Technology
- New Light Modulator Using GaSe Layered Crystal
- Al/GaAs Schottky Diode Implanted by Focused Ion Beam
- Focused Ga Ion Beam Etching of Si in Chlorine Gas
- Anomalously Large Shift of Absorption Edge of GaSe-Based Layered Crystal by Applied Electric Field
- Comparison of Slow-Neutron Intensities in Pulsed Spallation Neutron Sources with Various Proton Energies 0.8-3 GeV
- Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
- Crystal Structure of the Tetragonal Form of Ba_2YCu_3O_
- Crystal Structure of the Orthorhombic Form of Ba_2YCu_3O_ at 42 K
- Rietveld Refinement of the Structure of Ba_2YCu_3O_&l;lt;7-x> with Neutron Powder Diffraction Data
- 2a-U-2 KENS中性子源
- 1p-PS-11 中性子全散乱測定によるP_2Se_3のガラス転移
- 29a-R-11 遷移金局中水素の局在モード
- Layer Correlation in a-As_2(Se_xS_)_3 Systems
- 運動量変化の非常に大きい中性子散乱による4^He-IIのボーズ凝縮の直接観測
- 5p-M-3 運動量変化の非常に大きい中性子散乱による^4He -IIのボーズ凝縮の直接観測
- TOF粉末中性子回折装置VegaとSiriusの建設
- 2. わが国に於ける中性子散乱設備 : 将来の展望: パルス中性子源について ( 中性子散乱研究の新しい展開)
- 1. 中性子散乱研究への招待 ( 中性子散乱研究の新しい展開)
- 高エネルギー研中性子散乱実験施設の近況
- 陽子加速器を用いた中性子源とその利用 (中高エネルギ-加速器とその利用)
- 高エネルギー研中性子散乱共同利用実験施設における装置その後
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- Crystal Structure of Ba2HoCu3O7-x Determined by Neutron Powder Diffraction
- 3a-A6-12 変形したL2_1型磁性合金Pd_2MnSnの高分解能粉末中性子回折 : プロファイルアナリシス(3a A6 金属)
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