Magnetoresistance and de Haas-van Alphen Effect in U_3As_4 and U_3P_4 : Condensed Matter: Electronic Properties, etc.

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We measured the transverse magnetoresistance and de Haas-va,n Alphen (dHvA) oscillation in the ferromagnetic compounds U_3A_<s4> and U_3P_4. The magnetoresistance in both compounds increases as a function of H^n (n ≃ 2) in a wide angular region, indicating that U_3A_<s4> and U_3P_4 are compensated metals. As for U_3P_4, the angular dependence of the magnetoresistance shows clearly dips for particular field directions.. This implies the existence of a multiply-connected Fermi surface which favors open orbits along the (110) and (112) directions. We also detected several dHvA branches in U_3A_<s4> and U_3P_4. Most of them are due to the closed Fermi surfaces, which are explained by. recent results of fully relativistic spin-polarized LMTO band calculations. The cyclotron effective mass is large, ranging from 5 to 70 m_0, and consistent with the electronic specific heat coefficient of 83 mJ/K^2-mol in U_3A_<s4> and 90 mJ/K^2-mol in U_3P_4.
社団法人日本物理学会の論文
2001-02-15