Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-11-15
著者
-
Watanabe N
Ntt Photonics Laboratories
-
WATANABE Noriyuki
NTT Photonics Laboratories
-
NITTONO Takumi
NTT LSI Laboratories
-
WATANABE Noriyuki
NTT LSI Laboratories
-
ITO Hiroshi
NTT LSI Laboratories
-
SUGAHARA Hirohiko
NTT LSI Laboratories
-
NAGATA Koichi
NTT LSI Laboratories
-
NAKAJIMA Osaake
NTT LSI Laboratories
-
Nittono T
Ntt System Electronics Laboratories
-
Watanabe Norikazu
Electrotechnical Lanoratory
-
Nagata Kyoichi
Nec Corporation
-
Watanabe N
Mitsubishi Materials Corp. Omiya Jpn
-
Ito H
Ntt Photonics Laboratories Ntt Corporation
-
WATANABE Noemia
Laboratorio de Quartzo, Departamento de Materiais, Faculdade de Engenharia Mecanica, UNICAMP
関連論文
- 28a-YM-2 KEKの新粉末中性子回折装置
- High Resolution Neutron Spectrometer LAM-80ET and Rotational Tunnelling in 4-Methypyridine N-Oxide
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Carbon Doping in AlGaAs Using Trimethylarsine by Metalorganic Chemical Vapor Deposition with a High-Speed Rotating Susceptor
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
- Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
- Clinical and Histopathological Analyses of Desmoplastic Ameloblastoma
- Polymorphous Low-grade Adenocarcinoma of the Upper Lip
- Soft X-Ray Microscope with Zone Plates at UVSOR I : Performance
- Observation of Wet Biological Specimen by Soft X-Ray Microscope with Zone Plates at UVSOR
- Focusing Efficiency and Resolution of a Nickel Phase Zone Plate for Soft X-rays
- Compact High-Power Photonic Millimeter-Wave Emitter Module for 60-GHz-Band Fiber Radio Links(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
- 29p-P-13 高エネルギー陽子による中性子の生成
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
- Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
- 大型スポレ-ション中性子源による中性子散乱
- Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- The First Radioastronomical Observation with Photonic Local Oscillator
- Formation of p^+-layer in GaAs by dual implantation of Zn and As
- Redistrubution of Zn Implanted into GaAs
- Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
- 60-GHz Monolithic Photonic Millimeter-Wave Emitter for Fiber-Radio Applications
- Design Rule Relaxation Approach for High-Density DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Magnetic Anisotropy Caused by the Directivity of Ni Grown in Amorphous Ni-P Alloy due to Abrasion
- Inductive Effect of Magnetic Field on Crystal Growth in Amorphous-Ni-P Alloy
- Al/GaAs Schottky Diode Implanted by Focused Ion Beam : Beam-Induced Physics and Chemistry
- Focused Ga Ion Beam Etching of Si in Chlorine Gas : Etching and Deposition Technology
- New Light Modulator Using GaSe Layered Crystal
- Al/GaAs Schottky Diode Implanted by Focused Ion Beam
- Focused Ga Ion Beam Etching of Si in Chlorine Gas
- Anomalously Large Shift of Absorption Edge of GaSe-Based Layered Crystal by Applied Electric Field
- Comparison of Slow-Neutron Intensities in Pulsed Spallation Neutron Sources with Various Proton Energies 0.8-3 GeV
- Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
- InP/InGaAs Uni-Traveling-Carrier Photodiodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
- Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
- Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
- Passivation of P-Type Dopants in GaAs by Process Induced Hydrogenation and Reactivation by Thermal Annealing
- Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
- Surface Damage of Reactive Ion Beam Etched GaAs
- Suppression of Emitter Size Effecton Current Gainin AlGaAs/GaAs HBTs
- Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
- W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
- Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET's and Their Application to V-Band Amplifiers(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs(Lasers,Quantum Electronics)
- Indium Antimonide Layer Grown on Semi-insulating GaAs by Low-Pressure Metalorganie Chemical Vapor Deposition
- Very-Low-Frequency Response of a Nonlinear Urethane-Urea Copolymer Optical Modulator : Optics and Quantum Electronics
- Fabrication and Characterization of a Retroreflective Type of Practical LiNbO_3 Voltage Sensor Operating in the Range of 6Hz to 2 GHz (Special Issue on Optical Fiber Sensors)
- Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
- Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGa_As Layers
- Influeruce of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quarntum-Well Lasers
- Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates
- Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift Motion
- Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors
- Impurity Content Characterization of Brazilian Quartz Lascas
- High-Speed and High-Output Uni-Traveling-Carrier Photodiodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Surface Recombination Velocity in p-Type GaAs
- High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
- 2. わが国に於ける中性子散乱設備 : 将来の展望: パルス中性子源について ( 中性子散乱研究の新しい展開)
- 1. 中性子散乱研究への招待 ( 中性子散乱研究の新しい展開)
- Gas Source MBE Growth of GaSb
- Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
- Sn Incorporation in GaAs by Molecular Beam Epitaxy
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
- Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding