Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs(Lasers,Quantum Electronics)
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概要
- 論文の詳細を見る
he power dissipation tolerances for InP/InGaAs uni-travelling-carrier phutodiodes (UTC-PDs) and pin-PDs under high power optical inputs arc compared. Catastrophic failures occur at, constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.
- 社団法人電子情報通信学会の論文
- 2003-05-01
著者
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ITO Hiroshi
NTT Photonics Labs., NTT Corporation
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FURUTA Tomofumi
NTT Photonics Laboratories
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ISHIBASHI Tadao
NTT Photonics Laboratories
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YASUI Takako
NTT Photonics Laboratories, NTT Corporation
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Yasui Takako
Ntt Photonic Laboratories Ntt Corpration
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Ishibashi T
Ntt Photonics Laboratories
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Furuta Tomofumi
Ntt Photonic Laboratories Ntt Corpration
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Ito H
Ntt Photonics Laboratories Ntt Corporation
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Ishibashi Tadao
NTT Photonic Laboratories, NTT Corpration
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Ito Hiroshi
NTT Photonics Laboratories, NTT Corporation
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