Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGa_<1-x>As Layers
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概要
- 論文の詳細を見る
Silicon doping in lattice-mismatched In_xGa_<1-x>As (X=0,0.2, 0.35, 0.65, 1.0) films grown on GaAs by MBE is studied. The maximum carrier concentration for In_xGa_<1-x>As is found to increase with the InAs mole fraction, x. Based on this result, the x dependence of the specific contact resistance, ρ_c, for non-alloyed ohmic contacts to n-GaAs using compositionally graded In_xGa_<1-x>As layers is also investigated. It is found that ρ_c. decreases with increasing x for x≤0.65, and an extremely low specific contact resistance of 5×10^<-8>Ω・cm^2 is obtained with 1.5×10^<19> cm^<-3> doped n^+-In_<0.65>Ga_<0.35>As.
- 社団法人応用物理学会の論文
- 1986-10-20
著者
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NAKAJIMA Osaake
NTT LSI Laboratories
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Nittono T
Ntt System Electronics Laboratories
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Ishibashi T
Ntt Photonics Laboratories
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Ishibashi Tadao
Ntt Electrical Communications Laboratories
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NAKAJIMA Osaake
NTT Electrical Communications Laboratories
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NITTONO Takumi
NTT Electrical Communications Laboratories
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ITO Hiroshi
NTT Electrical Communications Laboratories
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Ito H
Ntt Photonics Laboratories Ntt Corporation
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