Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift Motion
スポンサーリンク
概要
- 論文の詳細を見る
The temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors with a graded bandgap base (GB-HBTs) is described. High current gain up to 1100 has been achieved at a collector current density of 6×10^3 A/cm^2 in MBE grown GB-HBTs with a 1×10^<19> cm^<-3> doped base. The current gain in the low temperature region does not depend on temperature. This tendency is clearly explained by a nearly constant base transit time due to electron drift motion caused by the built-in field, which contrasts with the electron diffusion.
- 社団法人応用物理学会の論文
- 1985-04-20
著者
-
Ishibashi T
Ntt Photonics Laboratories
-
Sugeta T
Ntt A Tsugi Electrical Communication Laboratories
-
Ito H
Ntt Photonics Laboratories Ntt Corporation
-
ITO Hiroshi
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
ISHIBASHI Tadao
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
SUGETA Takayuki
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Carbon Doping in AlGaAs Using Trimethylarsine by Metalorganic Chemical Vapor Deposition with a High-Speed Rotating Susceptor
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
- Clinical and Histopathological Analyses of Desmoplastic Ameloblastoma
- Polymorphous Low-grade Adenocarcinoma of the Upper Lip
- Compact High-Power Photonic Millimeter-Wave Emitter Module for 60-GHz-Band Fiber Radio Links(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
- Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- The First Radioastronomical Observation with Photonic Local Oscillator
- 60-GHz Monolithic Photonic Millimeter-Wave Emitter for Fiber-Radio Applications
- Quantum Efficiency of InP/InGaAs Uni-Traveling-Carrier Photodiodes at 1.55-1.7 μm Measured Using Supercontinuum Generation in Optical Fiber
- Quantum Efficiency of InP/InGaAs Uni-Traveling-Carrier Photodiodes at 1.55-1.7um Measured Using Supercontinuum Generation in Optical Fiber
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- InP/InGaAs Uni-Traveling-Carrier Photodiodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
- High-Speed Response of Uni-Traveling-Carrier Photodiodes
- Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
- Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
- Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
- Surface Damage of Reactive Ion Beam Etched GaAs
- Suppression of Emitter Size Effecton Current Gainin AlGaAs/GaAs HBTs
- Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
- W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
- Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs(Lasers,Quantum Electronics)
- Very-Low-Frequency Response of a Nonlinear Urethane-Urea Copolymer Optical Modulator : Optics and Quantum Electronics
- Fabrication and Characterization of a Retroreflective Type of Practical LiNbO_3 Voltage Sensor Operating in the Range of 6Hz to 2 GHz (Special Issue on Optical Fiber Sensors)
- Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
- Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGa_As Layers
- Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift Motion
- Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors
- High-Speed and High-Output Uni-Traveling-Carrier Photodiodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)