Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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ITO Hiroshi
NTT LSI Laboratories
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NAGATA Koichi
NTT LSI Laboratories
-
NAKAJIMA Osaake
NTT LSI Laboratories
-
ISHIBASHI Tadao
NTT LSI Laboratories
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Nagata Kyoichi
Nec Corporation
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Ishibashi T
Ntt Photonics Laboratories
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Makimura Takashi
NTT LSI Laboratories
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Ito H
Ntt Photonics Laboratories Ntt Corporation
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