Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
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概要
- 論文の詳細を見る
Current-induced degradation of current-voltage (I-V) characteristics in AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with Be-doped base layers is investigated. Large shifts of emitter-base on-voltage (?V_<BE>) are observed during high current operation. The behavior of degradation is qualitatively explained in terms of interstitial Be diffusion in combination with the electron-hole recombination process. Thermal annealing in As overpressure can successfully stabilize the characteristics. Degradation is not observed in AlGaAs/GaAs HBTs with C-doped base layser without the Zn diffusion process.
- 社団法人応用物理学会の論文
- 1992-08-15
著者
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NITTONO Takumi
NTT LSI Laboratories
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ITO Hiroshi
NTT LSI Laboratories
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NAKAJIMA Osaake
NTT LSI Laboratories
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Nittono T
Ntt System Electronics Laboratories
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Nagata Kyoichi
Nec Corporation
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NAGATA Koich
NTT LSI Laboratories
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Ito H
Ntt Photonics Laboratories Ntt Corporation
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