Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET's and Their Application to V-Band Amplifiers(Special Issue on Microwave and Millimeter-Wave Module Technology)

概要

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Self-aligned T-shaped Au/WSiN gate i-InGaP/n-InGaAs/i-GaAs heterostructure MESFET's with a BP-LDD structure were developed for application to microwave and millimeter-wave communication systems. Owing to the use of tilted-angle n^+-ion-implantation, symmetric and asymmetric structures FET's can be fabricated on the same chip and low noise, high breakdown voltage, and thigh power gain can be attained simultaneously. The fabircated symmetric FET's, with a gate legth of 0.13μm, exhibit a current cutoff frequency of more than 70GHz and a minimum noise figure as low as 1.0dB at 20GHz, while the gate-drain breakdown voltage is more than 8V and the MSG is as high as 7.8dB at 60GHz in the asymmetric FET's on the same chip. V-band MMIC amplifiers fabricated using symmetric FET's exhibit a gain of more than 9dB and a noise figure of 6dB over the 50 to 60GHz frequency range.
社団法人電子情報通信学会の論文
1998-06-25