NAKAJIMA Osaake | NTT LSI Laboratories
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概要
関連著者
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NAKAJIMA Osaake
NTT LSI Laboratories
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Nagata Kyoichi
Nec Corporation
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Ito H
Ntt Photonics Laboratories Ntt Corporation
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Ishibashi T
Ntt Photonics Laboratories
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ITO Hiroshi
NTT LSI Laboratories
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NAGATA Koichi
NTT LSI Laboratories
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Nittono T
Ntt System Electronics Laboratories
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NITTONO Takumi
NTT LSI Laboratories
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ISHIBASHI Tadao
NTT LSI Laboratories
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Makimura Takashi
NTT LSI Laboratories
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Ishibashi Tadao
Ntt Electrical Communications Laboratories
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Ishibashi Tadao
Ntt Atsugi Electrical Communication Laboratories
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NAKAJIMA Osaake
NTT Electrical Communications Laboratories
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NAKAJIMA Osaake
NTT A tsugi Electrical Communication Laboratories
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NAGATA Koichi
NTT A tsugi Electrical Communication Laboratories
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ITO Hiroshi
NTT A tsugi Electrical Communication Laboratories
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SUGETA Takayuki
NTT A tsugi Electrical Communication Laboratories
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Sugeta T
Ntt A Tsugi Electrical Communication Laboratories
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Watanabe N
Ntt Photonics Laboratories
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WATANABE Noriyuki
NTT Photonics Laboratories
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WATANABE Noriyuki
NTT LSI Laboratories
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SUGAHARA Hirohiko
NTT LSI Laboratories
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Watanabe Norikazu
Electrotechnical Lanoratory
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Nagata K
Department Of Materials Science And Engineering The-national Defense Academy
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Watanabe N
Mitsubishi Materials Corp. Omiya Jpn
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Yamauchi Yoshiki
NTT LSI Laboratories
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NAGATA Koich
NTT LSI Laboratories
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NAGATA Koichi
NTT Electrical Communications Laboratories
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NITTONO Takumi
NTT Electrical Communications Laboratories
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ITO Hiroshi
NTT Electrical Communications Laboratories
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WATANABE Noemia
Laboratorio de Quartzo, Departamento de Materiais, Faculdade de Engenharia Mecanica, UNICAMP
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Ito H
Toyota Central R&d Laboratories Inc.
著作論文
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
- Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
- Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
- Passivation of P-Type Dopants in GaAs by Process Induced Hydrogenation and Reactivation by Thermal Annealing
- Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
- Surface Damage of Reactive Ion Beam Etched GaAs
- Suppression of Emitter Size Effecton Current Gainin AlGaAs/GaAs HBTs
- Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
- Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
- Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGa_As Layers