Surface Damage of Reactive Ion Beam Etched GaAs
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概要
- 論文の詳細を見る
Surface damage induced in GaAs by reactive ion beam etching (RIBE) with BCI_3 is investigated. A Schottky diode structure fabricated on the etched surface is employed for characterizing the RIBE damage. To evaluate the degree of the damage with high sensitivity, the specific contact resistance through the tunneling process is measured as well as the Schottky diode parameters. The damage due to RIBE causes very little change in the Schottky diode characteristics. However, it drastically increases the specific contact resistance. This results from the decrease of the effective carrier concentration in the thin (less than 200A^^°) surface damage layer.
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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NAKAJIMA Osaake
NTT LSI Laboratories
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Nagata K
Department Of Materials Science And Engineering The-national Defense Academy
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Nagata Kyoichi
Nec Corporation
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Ishibashi T
Ntt Photonics Laboratories
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Ishibashi Tadao
Ntt Electrical Communications Laboratories
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NAGATA Koichi
NTT Electrical Communications Laboratories
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NAKAJIMA Osaake
NTT Electrical Communications Laboratories
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