High-Speed Avalanche Photodiode with a Neutral Absorption Layer for 1.55 μm Wavelength
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概要
- 論文の詳細を見る
We have developed an InP-based avalanche photodiode (APD) with a p-type neutral absorption layer and refracting-facet (RF) structure. The APD shows a maximum DC response of 0.71 A/W at 1.55 μm wavelength, a low breakdown voltage of 16.9 V, 3 dB down bandwidth of 40 GHz at a gain of 2.3, and a gain-bandwidth product of 140 GHz. This performance demonstrates the superior potential of electron-injection-type APDs compared to hole-injection-type APDs.
- Japan Society of Applied Physicsの論文
- 2004-03-01
著者
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Ando Seigo
Ntt Electrical Communications Laboratories
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Ando Seigo
Ntt Electronics Corporation
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Hirota Yukihiro
Ntt Photonics Laboratories
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Ishibashi Tadao
Ntt Electrical Communications Laboratories
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Ishibashi Tadao
Ntt Electronics Corporation
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