Microwave Performance of GaAs PBT's Fabricated from MO-CVD Wafers

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概要

• 論文の詳細を見る

• Microwave performance of GaAs PBT's fabricated from MO-CVD wafers is presented. Fabricated transistors operate as a mixed mode of pentode and triode. The transconductance of devices with active areas of 15 μm long by 50 μm wide is about 100 mS, corresponding to 35 mS/mm per equivalent gate width. The frequency at unity current gain ( f_T) and the maximum frequency of oscillation (f_<max>) are determined to be 7.5 GHz and 18 GHz, respectively, from s-parameter measurement.

• 社団法人応用物理学会の論文
• 1986-02-20

著者

• SUGIURA Hideo

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• Ando Seigo

  Ntt Electrical Communications Laboratories

• Asai Hiromitsu

  Ntt Electrical Communications Laboratories

• Sugiura Hideo

  Ntt Electrical Communications Laboratories

• TAKANASHI Yoshifumi

  NTT Electrical Communications Laboratories

• HONDA Takashi

  NTT Electrical Communications Laboratories

• SUSA Nobuhiko

  NTT Electrical Communications Laboratories

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