Nonradiative e-h Recombination Characteristics of Mid-Gap Electron Trap in Al_xGa_<1-x>As (X=0.4) Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-04-20
著者
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Amano Chikara
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
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ANDO Koshi
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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SUGIURA Hideo
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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YAMAGUCHI Masafumi
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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SALETES Anne
Laboratoire de Physique du Solid et Energie Solaire, C.N.R.S.
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Yamaguchi Masafumi
Ntt Electrical Communications Laboratories
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Saletes A
Laboratoire De Physique Du Solid Et Energie Solaire C.n.r.s.
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Ando Koshi
Ntt Electrical Communications Laboratories
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Ando Koshi
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
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Sugiura Hideo
Ntt Electrical Communications Laboratories
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Sugiura Hideo
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
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Yamaguchi Masafumi
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
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