Molecular Beam Epitaxial Growth of GaAs with Arsenic Molecules Transported by Hydrogen Gas
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概要
- 論文の詳細を見る
GaAs films have been grown in an ultra-high vacuum chamber using molecules transported by a hydrogen carrier gas. The hydrogen gas flow rate through a heated arsenic cell varied over a range of 0.3-100 cm^3/min. This corresponds to a background hydrogen gas pressure range of 1×10^<-6>〜3×10^<-3> Torr. Arsenic was clearly transported from the heated arsenic ingot to the substrate surface when the hydrogen gas flow rate was greater than 5 cm^3/min. This suggests the possibility of a more precise arsenic pressure control. The low-temperature photoluminescence spectra of these GaAs films reveal that hydrogen gas flow effectively reduces acceptor type impurities in the crystals.
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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KAWASHIMA Minoru
NTT Electrial Communication Laboratories
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Sugiura H
Ntt Opti‐electronics Lab. Kanagawa‐ken Jpn
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Sugiura Hideo
Ntt Electrical Communications Laboratories
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Kawashima M
Ntt Basic Research Lab. Kanagawa
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