Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam
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概要
- 論文の詳細を見る
RHEED oscillations are simultaneously observed in different locations on growing GaAs by scanning the growth surface with an incident electron beam. The lateral growth-rate profiles obtained by in-situ measurements using modulated electron-beam scanning agree well with those of layer-thickness measurements made after growth. The time needed to complete the growth of the lst monolayer distinctly differs from that of the succeeding monolayers, while the growth duration is almost constant for each succeeding monolayer. The time required for the 1st monolayer growth depends on the location on the growth surface, as well as on such growth parameters as the arsenic flux and substrate temperature.
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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KAWASHIMA Minoru
NTT Electrial Communication Laboratories
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Sugiura H
Ntt Opti‐electronics Lab. Kanagawa‐ken Jpn
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Sugiura Hideo
Ntt Electrical Communications Laboratories
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Kawashima M
Ntt Basic Research Lab. Kanagawa
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