High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_<1-x>As/GaAs/Al_yGa_<1-y>As Quantum Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-02-20
著者
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Ploog K
Paul Drude Inst. Berlin Deu
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Ploog Klaus
Max-planck-institut Fur Festkorperforshung
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Ploog Klaus
Max-planck-institut Fur Festkorperforschung
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Fischer Albrecht
Max-planck-institut Fur Festkorperforschung
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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SCHUBERT Erdman
Max-Planck-Institut fur Festkorperforschung
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Fischer A
Max‐planck‐inst. Festkoerperforschung Stuttgart Deu
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Fischer A
Institut Fur Zoologie Universitat Mainz
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Schubert Erdman
Max-planck-institut Fur Festkorperforschung:(present Address) At & T Bell Laboratories
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Ploog Klaus
Max-Planck-Institut
関連論文
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- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_As/GaAs/Al_yGa_As Quantum Wells
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Migration-Enhanced Epitaxy of GaAs and AlGaAs
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
- Pressure Dependence of the Valence-Band Offset in (GaAs)_8/(Al_Ga_As)_ Short Period Superlattice
- Nucleation, Relaxation and Redistribution of Si Layers in GaAs
- Electrical Properties of GaAs Overgrown by Molecular Beam Epitaxy on Gallium Ion Implanted Substrates
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
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- Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE
- Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy : Semiconductors and Semiconductor Devices
- Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy : Condensed Matter
- Thermal Annealing Effect of AlAs-GaAs Superlattice Grown at 300℃ by Migration-Enhanced Epitaxy : Condensed Matter
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
- Observation of Transient Behavior of GaAs MBE Growth by RHEED Oscillation
- Molecular Beam Epitaxial Growth of GaAs with Arsenic Molecules Transported by Hydrogen Gas
- Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
- Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam
- Flow-Rate Modulation Epitaxy of GaAs
- Growth of GaAs on Preferentially Etched GaAs Surfaces by Migration-Enhanced Epitaxy : Condensed Matter
- Luminescence Characteristics from Gaussian Shaped Quantum Wells
- Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy
- Growth of ZnSe/GaAs Superlattices by Migration-Enhanced Epitaxy
- Lattice Vibration of Thin-Layered AlAs-GaAs Superlattices
- Surface Migration of Ga and Al Atoms on (100) GaAs and AlAs during Migration-Enhanced Epitaxy
- Growth Mechanism of GaAs during Migration-Enhanced Epitaxy at Low Growth Temperatures
- 2p-L1-4 AIAs/GaAs多重量子井戸における連続共鳴トンネリングのダイナミックス(半導体,(表面・界面・超格子))