Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-07-20
著者
-
Ploog K.
Max-Planck固体研
-
Ploog K
Max‐planck‐inst. Festkoerperforschung Stuttgart Deu
-
Ploog Klaus
Max-planck-institut Fur Festkorperforshung
-
Schubert E
Max‐planck‐inst. Festkoerperforschung Stuttgart Deu
-
Ploog K.
Max-planck-institut Fur Festkorperforschung
-
SCHUBERT E.
Max-Planck-Institut fur Festkorperforschung
関連論文
- 27a-N-7 p型GaAs-AlAs量子井戸におけるホール波動関数の共鳴ラマン散乱による決定
- Tunable Photo- and Electroluminescence from GaAs Doping Superlattices : B-3: NOVEL DEVICES
- High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_As/GaAs/Al_yGa_As Quantum Wells
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- Pressure Dependence of the Valence-Band Offset in (GaAs)_8/(Al_Ga_As)_ Short Period Superlattice
- Nucleation, Relaxation and Redistribution of Si Layers in GaAs
- Electrical Properties of GaAs Overgrown by Molecular Beam Epitaxy on Gallium Ion Implanted Substrates
- An XPS Study of the Passivating Oxide Layer Produced on GaAs (001) Substrate by Heating in Air above 200℃ : Surfaces, Interfaces and Films
- The δ-Doped Field-Effect Transistor
- GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth
- 29p-LD-12 GaAs-AlAs短周期超格子における共鳴ラマン散乱(半導体)