An XPS Study of the Passivating Oxide Layer Produced on GaAs (001) Substrate by Heating in Air above 200℃ : Surfaces, Interfaces and Films
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概要
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The passivating oxide layer resulting from a high-temperature (250℃ in air) GaAs substrate preparation procedure has been analysed by X-ray photoelectron spectroscopy. It is shown that the protective film obtained from heating a semi-insulating substrate in clean air to 250℃ is mainly gallium oxide whereas it is an arsenic-rich mixture of As and Ga oxides after the standard preparation procedure. At this temperature, the oxidation steady-state conditions are reached after 5 minutes of heating. The higher the passivating temperature, the lower the arsenic content of the oxide layer.
- 社団法人応用物理学会の論文
- 1988-02-20
著者
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Ploog K.
Max-planck-institut Fur Festkorperforschung
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Massies J.
Laboratoire De Physique Du Solide Et Energie Solaire
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Contour J.
Laboratoire De Physique Du Solide Et Energie Solaire
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FRONIUS H.
Max-Planck-Institut fur Festkorperforschung
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Fronius H
Max-planck-institut Fur Festkorperforschung
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