GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth

スポンサーリンク

概要

• 論文の詳細を見る

• We have developed a new method for GaAs substrate preparation which significantly reduces the formation of oval defects during MBE growth of selectively doped n-Al_xGa_<1-x>As/GaAs heterostructures. The method simply requires treatment in H_2SO_4 after mechano-chemical polishing in NaOCl solution and generation of a protective surface oxide during In soldering. Routinely a density of oval defects of less than 200 cm^<-2> is achieved for 2 μm thick heterostructures. The efficiency of the new preparation procedure is demonstrated by 2DEG mobilities in excess of 10^6 cm^2/(Vs) at 6 K obtained with a spacer width as narrow as 18 nm.

• 社団法人応用物理学会の論文
• 1986-02-20

著者

• Ploog K.

  Max-planck-institut Fur Festkorperforschung

• FRONIUS H.

  Max-Planck-Institut fur Festkorperforschung

• Fischer A.

  Max-planck-institut Fur Festkorperforschung

関連論文

• 27a-N-7 p型GaAs-AlAs量子井戸におけるホール波動関数の共鳴ラマン散乱による決定
• Tunable Photo- and Electroluminescence from GaAs Doping Superlattices : B-3: NOVEL DEVICES
• Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
• An XPS Study of the Passivating Oxide Layer Produced on GaAs (001) Substrate by Heating in Air above 200℃ : Surfaces, Interfaces and Films
• The δ-Doped Field-Effect Transistor
• GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth
• 29p-LD-12 GaAs-AlAs短周期超格子における共鳴ラマン散乱(半導体)

スポンサーリンク