The δ-Doped Field-Effect Transistor

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概要

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• A new Schottky-gate FET grown by molecular-beam epitaxy is presented. A V-shaped potential well with a 2D electron-gas is generated in the epilayer by implementation of a δ-function like doping profile. The δ-doped FET is scaled down to its ultimate physical limit normal to the crystal surface. The advantages of the new device are high gate-breakdown voltage, high transconductance due to the proximity of the electron channel to the crystal surface, and high electron concentration in the channel. Current-voltage and capacitance-voltage measurements reveal a large breakdown voltage and a narrow impurity and carrier distribution.

• 社団法人応用物理学会の論文
• 1985-08-20

著者

• Ploog K.

  Max-planck-institut Fur Festkorperforschung

• Ploog K.

  Max-planck-institut Fur Festkorpergforschung

• Shubert E.F.

  Max-Planck-Institut fur Festkorpergforschung

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