Tunable Photo- and Electroluminescence from GaAs Doping Superlattices : B-3: NOVEL DEVICES
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Ploog K.
Max-Planck固体研
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Kunzel H.
Max-planck-institut Fur Festkorperforschung
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Ploog K.
Max-planck-institut Fur Festkorperforschung
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JUNG H.
Max-Planck-Institut fur Festkorperforschung
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RUDEN P.
Max-Planck-Institut fur Festkorperforschung
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- Tunable Photo- and Electroluminescence from GaAs Doping Superlattices : B-3: NOVEL DEVICES
- Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
- An XPS Study of the Passivating Oxide Layer Produced on GaAs (001) Substrate by Heating in Air above 200℃ : Surfaces, Interfaces and Films
- The δ-Doped Field-Effect Transistor
- GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth
- 29p-LD-12 GaAs-AlAs短周期超格子における共鳴ラマン散乱(半導体)