Electrical Properties of GaAs Overgrown by Molecular Beam Epitaxy on Gallium Ion Implanted Substrates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-05-15

著者

• Ploog Klaus

  Max-planck-institut Fur Festkorperforshung

• Ploog Klaus

  Max-planck-institut Fur Festkorperforschung

• Fischer A

  Max-planck-institut Fur Festkorperforschung

• Fischer Albrecht

  Max-planck-institut Fur Festkorperforschung

• ISHIBASHI Tadao

  Max-Planck-Institut fur Festkorperforschung

• WIECK Andreas

  Max-Planck-Institut fur Festkorperforschung

関連論文

• High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_As/GaAs/Al_yGa_As Quantum Wells
• Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
• Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
• Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
• Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
• Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
• Pressure Dependence of the Valence-Band Offset in (GaAs)_8/(Al_Ga_As)_ Short Period Superlattice
• Nucleation, Relaxation and Redistribution of Si Layers in GaAs
• Electrical Properties of GaAs Overgrown by Molecular Beam Epitaxy on Gallium Ion Implanted Substrates
• ZOOLOGY : WHICH IS THE UNIFYING CONCEPT?(The International Symposium, New Perspectives for Zoology)(Proceeding of the Seventy-Third Annual Meeting of the Zoological Society of Japan)

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