Pressure Dependence of the Valence-Band Offset in (GaAs)_8/(Al_<0.3>Ga_<0.7>As)_<12> Short Period Superlattice
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-01
著者
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Ploog Klaus
Max-planck-institut Fur Festkorperforshung
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Ploog Klaus
Max-planck-institut Fur Festkorperforschung
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Liu Zhen-xian
National Laboratory For Semiconductor Superlattices And Microstructures Institute Of Semiconductors
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Wang Zhao-ping
National Laboratory For Semiconductor Superlattices And Microstructures Institute Of Semiconductors
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Ploog Klaus
Max-plank-institut Fur Festkorperforschung
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LI Guo-hua
National Laboratory for Semiconductor Superlattices and Microstructures, Institute of Semiconductors
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HAN He-xiang
National Laboratory for Semiconductor Superlattices and Microstructures, Institute of Semiconductors
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JIANG De-sheng
National Laboratory for Semiconductor Superlattices and Microstructures, Institute of Semiconductors
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Li Guo-hua
National Laboratory For Semiconductor Superlattices And Microstructures Institute Of Semiconductors
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Han He-xiang
National Laboratory For Semiconductor Superlattices And Microstructures Institute Of Semiconductors
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Jiang De-sheng
National Laboratory For Semiconductor Superlattices And Microstructures Institute Of Semiconductors
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Ploog Klaus
Max-Planck-Institut
関連論文
- High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_As/GaAs/Al_yGa_As Quantum Wells
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- Pressure Dependence of the Valence-Band Offset in (GaAs)_8/(Al_Ga_As)_ Short Period Superlattice
- Nucleation, Relaxation and Redistribution of Si Layers in GaAs
- Electrical Properties of GaAs Overgrown by Molecular Beam Epitaxy on Gallium Ion Implanted Substrates
- 2p-L1-4 AIAs/GaAs多重量子井戸における連続共鳴トンネリングのダイナミックス(半導体,(表面・界面・超格子))