Nucleation, Relaxation and Redistribution of Si Layers in GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-15
著者
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Ploog Klaus
Max-planck-institut Fur Festkorperforshung
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Ploog Klaus
Max-planck-institut Fur Festkorperforschung
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Ploog Klaus
Max-planck-institut Fur Festkorperforschung:(present) Paul-drude-instutute Fur Festkorperelektronrk
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WAGNER Joachim
Fraunhofer-Institut fur Angewandte Festkorperphysik
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BRANDT Oliver
Central Research Laboratory, Mitsubishi Electric Corporation
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CROOK Gentry
Department for Electrical and Computer Engineering, University of Wisconsin
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BIERWOLF Rainer
Max-Planck-Institut fur Metallforschung
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HOHENSTEIN Matthias
Max-Planck-Institut fur Metallforschung
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MAIER Max
Fraunhofer-Institut fur Angewandte Festkorperphysik
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Crook Gentry
Department For Electrical And Computer Engineering University Of Wisconsin
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Brandt Oliver
Central Research Laboratory Mitsubishi Electric Corporation
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Wagner Joachim
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany
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Ploog Klaus
Max-Planck-Institut
関連論文
- High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_As/GaAs/Al_yGa_As Quantum Wells
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates
- Pressure Dependence of the Valence-Band Offset in (GaAs)_8/(Al_Ga_As)_ Short Period Superlattice
- Nucleation, Relaxation and Redistribution of Si Layers in GaAs
- Electrical Properties of GaAs Overgrown by Molecular Beam Epitaxy on Gallium Ion Implanted Substrates
- AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
- High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
- Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
- Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
- 2p-L1-4 AIAs/GaAs多重量子井戸における連続共鳴トンネリングのダイナミックス(半導体,(表面・界面・超格子))